KTC9012S Datasheet and Replacement

   Type Designator: KTC9012S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 96
   Noise Figure, dB: -
   Package: SOT23

KTC9012S Substitution

- BJT Cross-Reference Search

KTC9012S Datasheet (PDF)

..1. Size:353K kec
ktc9012s.pdf pdf_icon

SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)

0.1. Size:613K kec
ktc9012sc.pdf pdf_icon

SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA

7.1. Size:360K kec
ktc9012.pdf pdf_icon

SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40

8.1. Size:946K 1
2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf pdf_icon

8.2. Size:354K kec
ktc9014s.pdf pdf_icon

SEMICONDUCTOR KTC9014STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Excellent hFE LinearityB 1.30+0.20/-0.15: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.201G 1.90Complementary to KTC9

8.3. Size:400K kec
ktc9011s.pdf pdf_icon

SEMICONDUCTOR KTC9011STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. EL B LFEATUREDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz._A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CH

8.4. Size:34K kec
ktc9018.pdf pdf_icon

SEMICONDUCTOR KTC9018TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXHigh Transition Frequency : fT=800MHz(Typ.). GC 3.70 MAXDD 0.45

8.5. Size:354K kec
ktc9015s.pdf pdf_icon

SEMICONDUCTOR KTC9015STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise :NF=1dB(Typ.) at f=1kHz.E 2.40+0.30/-0.20Complementary to KTC9014S. 1

8.6. Size:109K kec
ktc9015.pdf pdf_icon

8.7. Size:643K kec
ktc9015sc.pdf pdf_icon

SEMICONDUCTOR KTC9015SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).Complementary to KTC9014SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -70 VCollector-Base VoltageVCEO -50 VCollector-Emitter VoltageVEBOEmitter-Base Vo

8.8. Size:27K kec
ktc9016.pdf pdf_icon

SEMICONDUCTOR KTC9016TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURESSmall Reverse Transfer Capacitance: Cre=0.65pF(Typ.).N DIM MILLIMETERSLow Noise Figure :NF=2.2dB(Typ.) at f=100MHz.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25

8.9. Size:651K kec
ktc9014sc.pdf pdf_icon

SEMICONDUCTOR KTC9014SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Complementary to KTC9015SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 80 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltag

8.10. Size:343K kec
ktc9014a.pdf pdf_icon

SEMICONDUCTOR KTC9014ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9015A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RA

8.11. Size:59K kec
ktc9013.pdf pdf_icon

SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect

8.12. Size:402K kec
ktc9016s.pdf pdf_icon

SEMICONDUCTOR KTC9016STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1

8.13. Size:113K kec
ktc9014.pdf pdf_icon

8.14. Size:402K kec
ktc9018s.pdf pdf_icon

SEMICONDUCTOR KTC9018STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.VHF BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSSmall Reverse Transfer Capacitance_A 2.93 0.20+B 1.30+0.20/-0.15: Cre=0.65pF(Typ.).C 1.30 MAX2Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20High Tran

8.15. Size:26K kec
ktc9011.pdf pdf_icon

SEMICONDUCTOR KTC9011TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B CFEATUREHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 V H 0

8.16. Size:344K kec
ktc9015a.pdf pdf_icon

SEMICONDUCTOR KTC9015ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise :NF=1dB(Typ.) at f=1kHz.A 4.70 MAXEKB 4.80 MAXComplementary to KTC9014A. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM

8.17. Size:350K kec
ktc9013sc.pdf pdf_icon

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

8.18. Size:353K kec
ktc9013s.pdf pdf_icon

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .