KTC9015S Specs and Replacement
Type Designator: KTC9015S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
KTC9015S Substitution
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KTC9015S datasheet
SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.) at f=1kHz. E 2.40+0.30/-0.20 Complementary to KTC9014S. 1 ... See More ⇒
SEMICONDUCTOR KTC9015SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Complementary to KTC9014SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -70 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Vo... See More ⇒
SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM ... See More ⇒
Detailed specifications: KTC812U, KTC813U, KTC815, KTC8550S, KTC9011S, KTC9012S, KTC9013S, KTC9014S, B647, KTC9016S, KTC9018S, KTC945, KTC945B, KTD1003, KTD1047B, KTD1347, KTD1411
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