KTD2686 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD2686
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: SOT-89
KTD2686 Transistor Equivalent Substitute - Cross-Reference Search
KTD2686 Datasheet (PDF)
ktd2686.pdf
SEMICONDUCTOR KTD2686TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDARLINGTON TRANSISTOR.SOLENOID DRIVER. MOTOR DRIVER.ACFEATURES HHigh DC Current GainG: hFE=2000(Min.) (VCE=2V, IC=1A)DIM MILLIMETERSA 4.70 MAXD_+D B 2.50 0.20MAXIMUM RATINGS (Ta=25 )K C 1.70 MAXD 0.45+0.15/-0.10F FCHARACTERISTIC SYMBOL RATING UNITE 4.25 MAX_F 1.50 0.10+VCBOCo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .