KTD2686 Specs and Replacement
Type Designator: KTD2686
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: SOT-89
KTD2686 Substitution
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KTD2686 datasheet
SEMICONDUCTOR KTD2686 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER. A C FEATURES H High DC Current Gain G hFE=2000(Min.) (VCE=2V, IC=1A) DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 MAXIMUM RATINGS (Ta=25 ) K C 1.70 MAX D 0.45+0.15/-0.10 F F CHARACTERISTIC SYMBOL RATING UNIT E 4.25 MAX _ F 1.50 0.10 + VCBO Co... See More ⇒
Detailed specifications: KTD1530, KTD1624, KTD1691, KTD1824, KTD1824E, KTD1854T, KTD1863, KTD1882, C5198, KTD2854, KTD545, KTD600K, KTD718B, KTD882, KTH2369, KTH2369A, KTN2222AE
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