KTD2854 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD2854
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO92L
KTD2854 Transistor Equivalent Substitute - Cross-Reference Search
KTD2854 Datasheet (PDF)
..1. Size:360K kec
ktd2854.pdf
ktd2854.pdf
SEMICONDUCTOR KTD2854TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.SWITCHING APPLICATIONS.B DPOWER AMPLIFIER APPLICATION.FEATURES DIM MILLIMETERSPHigh DC Current GainDEPTH:0.2A 7.20 MAX: hFE=2000(Min.) (VCE=2V, IC=1A) B 5.20 MAXCC 0.60 MAXSLow Saturation VoltageD 2.50 MAXQE 1.15 MAXK: VCE(sat)=1.5V(Max.) (IC=
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
