KTD545 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD545
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
KTD545 Transistor Equivalent Substitute - Cross-Reference Search
KTD545 Datasheet (PDF)
ktd545.pdf
SEMICONDUCTOR KTD545TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS B CFEATURES Low Saturation Voltage : VCE(sat)=0.3V(Max.) at IC=0.5A.N DIM MILLIMETERS Complementary to KTB598.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .