All Transistors. 2N5979 Datasheet

 

2N5979 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5979
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO126

 2N5979 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5979 Datasheet (PDF)

 9.1. Size:12K  semelab
2n5971.pdf

2N5979

2N5971Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:115K  jmnic
2n5972.pdf

2N5979
2N5979

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL

 9.3. Size:93K  jmnic
2n5973.pdf

2N5979
2N5979

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL

 9.4. Size:100K  jmnic
2n5970.pdf

2N5979
2N5979

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL

 9.5. Size:117K  inchange semiconductor
2n5972.pdf

2N5979
2N5979

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max

 9.6. Size:116K  inchange semiconductor
2n5973.pdf

2N5979
2N5979

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max

 9.7. Size:117K  inchange semiconductor
2n5970.pdf

2N5979
2N5979

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max

Datasheet: 2N5971 , 2N5972 , 2N5973 , 2N5974 , 2N5975 , 2N5976 , 2N5977 , 2N5978 , S9013 , 2N598 , 2N5980 , 2N5981 , 2N5982 , 2N5983 , 2N5984 , 2N5985 , 2N5986 .

 

 
Back to Top