KTD882 Specs and Replacement

Type Designator: KTD882

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 KTD882 Substitution

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KTD882 datasheet

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KTD882

SEMICONDUCTOR KTD882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTB772. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 40 V _ + F 11.0 0.3 G 2.9 MAX VCEO Collec... See More ⇒

Detailed specifications: KTD1854T, KTD1863, KTD1882, KTD2686, KTD2854, KTD545, KTD600K, KTD718B, A1015, KTH2369, KTH2369A, KTN2222AE, KTN2222AU, KTN2222U, KTN2369AS, KTN2369AU, KTN2907AE

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