KTH2369A Specs and Replacement

Type Designator: KTH2369A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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KTH2369A datasheet

 7.1. Size:393K  kec

 kth2369 a.pdf pdf_icon

KTH2369A

SEMICONDUCTOR KTH2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. B C FEATURES High Frequency Characteristics fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA). Excellent Switching Characteristics. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UN... See More ⇒

Detailed specifications: KTD1882, KTD2686, KTD2854, KTD545, KTD600K, KTD718B, KTD882, KTH2369, BD140, KTN2222AE, KTN2222AU, KTN2222U, KTN2369AS, KTN2369AU, KTN2907AE, KTN2907AU, KTX101E

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