KTH2369A Datasheet, Equivalent, Cross Reference Search
Type Designator: KTH2369A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
KTH2369A Transistor Equivalent Substitute - Cross-Reference Search
KTH2369A Datasheet (PDF)
kth2369 a.pdf
SEMICONDUCTOR KTH2369/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION.B CFEATURESHigh Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).Excellent Switching Characteristics.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UN
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .