KTN2222U Specs and Replacement

Type Designator: KTN2222U

SMD Transistor Code: ZB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: USM

 KTN2222U Substitution

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KTN2222U datasheet

 ..1. Size:49K  kec

 ktn2222u au.pdf pdf_icon

KTN2222U

SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ A + 2.00 0.20 D 2 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 VCE(sat)=0.3V(Max.) ; IC=150... See More ⇒

 7.1. Size:405K  kec

 ktn2222 a.pdf pdf_icon

KTN2222U

SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K B 4.80 MAX VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. G C 3.70 MAX D Complementary to the KTN2907/2907A. D 0.45 E 1.00 K... See More ⇒

 7.2. Size:44K  kec

 ktn2222ae.pdf pdf_icon

KTN2222U

SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. D 0.27+0.10/-0.05 _ Complementary... See More ⇒

 7.3. Size:411K  kec

 ktn2222s as.pdf pdf_icon

KTN2222U

SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 G... See More ⇒

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Detailed specifications: KTD545, KTD600K, KTD718B, KTD882, KTH2369, KTH2369A, KTN2222AE, KTN2222AU, BC557, KTN2369AS, KTN2369AU, KTN2907AE, KTN2907AU, KTX101E, KTX101U, KTX102E, KTX102U

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