2N5980 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5980
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
2N5980 Transistor Equivalent Substitute - Cross-Reference Search
2N5980 Datasheet (PDF)
2n5989 2n5990 2n5991.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
2n5989.pdf
isc Silicon NPN Power Transistor 2N5989DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier andswitching circuitsABSOLUTE MAXIMUM RATINGS(T =25)
2n5989 2n5990 2n5991.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.
Datasheet: 2N5973 , 2N5974 , 2N5975 , 2N5976 , 2N5977 , 2N5978 , 2N5979 , 2N598 , 2SD669 , 2N5981 , 2N5982 , 2N5983 , 2N5984 , 2N5985 , 2N5986 , 2N5987 , 2N5988 .
