All Transistors. MJE13003HV Datasheet

 

MJE13003HV Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE13003HV
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 530 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO126

 MJE13003HV Transistor Equivalent Substitute - Cross-Reference Search

   

MJE13003HV Datasheet (PDF)

 ..1. Size:41K  kec
mje13003hv.pdf

MJE13003HV MJE13003HV

SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

 5.1. Size:212K  sisemi
mje13003ht 1.pdf

MJE13003HV MJE13003HV

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

 5.2. Size:550K  sisemi
mje13003ht.pdf

MJE13003HV MJE13003HV

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

 5.3. Size:195K  foshan
mje13003h1.pdf

MJE13003HV MJE13003HV

MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO

 5.4. Size:191K  foshan
mje13003h6.pdf

MJE13003HV MJE13003HV

MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.5. Size:189K  foshan
mje13003h5.pdf

MJE13003HV MJE13003HV

MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.6. Size:243K  foshan
mje13003hn6.pdf

MJE13003HV MJE13003HV

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP

 5.7. Size:284K  foshan
mje13003hk5.pdf

MJE13003HV MJE13003HV

MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 5.8. Size:191K  foshan
mje13003h3.pdf

MJE13003HV MJE13003HV

MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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