MPSA94A Datasheet, Equivalent, Cross Reference Search

SEMICONDUCTOR MPSA94ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. B CFEATURES High Breakdown Voltage.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -480 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K 0.55 MAXVCEO -480 VCollect

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UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-400V CEO* Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA94L-AB3-R MPSA94G-AB3-R SOT-89 B C E Tape ReelMPSA94L-T92-B MPSA94G-T92-B TO-92 E B C

SEMICONDUCTOR MPSA94TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. B CFEATURES High Breakdown Voltage.Complementary to MPSA44.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25)D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -400 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K

MPSA94High-Voltage PNP TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -400 VdcCollector-Base Voltage VCBO -400VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150

Spec. No. : HE6355HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.03.30MICROELECTRONICS CORP.Page No. : 1/5HMPSA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA94 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400V(Min.) at IC=1mA High Current: IC=300mA at 25C Complementary to HMPSA44Absolute Max

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA94 TRANSISTOR (PNP) FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25) Collector current 1. EMITTER ICM: -0.2 A 2. BASE Collector-base voltage 3. COLLECTOR V(BR)CBO: -400 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2011.12.13 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor MPSA94Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.08V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to MPSA44. Pb-f

MPSA94 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Collector P

MPSA94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 300 mA Power Dissipation