All Transistors. TIP112F Equivalents Search

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=1000(Min.), VCE=4V, IC=1A. _ E 3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Volta... See More ⇒

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN... See More ⇒

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy... See More ⇒

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon www.onsemi.com Transistors DARLINGTON Designed for general-purpose amplifier and low-speed switching applications. 2 AMPERE COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS = 1.0 Adc Collector-Emitt... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and... See More ⇒

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D 3.60 0.20 T E 3.00 F ... See More ⇒

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCE... See More ⇒

Spec. No. HE200203 HI-SINCERITY Issued Date 2000.08.01 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temp... See More ⇒

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi... See More ⇒

isc Silicon NPN Darlington Power Transistor TIP112 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 2A CE(sat) C Complement to Type TIP117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... See More ⇒