TIP35CA Datasheet and Replacement

SEMICONDUCTOR TIP35CATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURESO KRecommended for 75W Audio Frequency DIM MILLIMETERSAmplifier Output Stage. _A +15.60 0.20_B4.80 + 0.20Complementary to TIP36CA._C 19.90 + 0.20_D 2.00 0.20+Icmax:25A. _d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 +

TIP35CPTIP36CPComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN-PNP transistorsApplications General purpose3 Audio amplifier 21TO-3PDescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excepti

TIP35CTIP36B/TIP36CCOMPLEMENTARY SILICON HIGH POWERTRANSISTORS STMicroelectronic PREFERREDSALESTYPESDESCRIPTION The TIP35C is a silicon Epitaxial-Base NPNtransistor mounted in TO-218 plastic package. Itis intented for use in power amplifier andswitching applications.3The complementary PNP type is TIP36C.2Also TIP36B is a PNP type. 1TO-218INTERNAL SCHEMATIC DI

TIP35CWTIP36CWComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show exc

TIP35CTIP36CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose32 Audio amplifier1TO-247DescriptionThe devices are manufactured in planar Figure 1. Internal schematic diagramstechnology with base island layout. The resulting transistors show excep

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2)(1)BE (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

SEMICONDUCTOR TIP35CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURESRecommended for 75W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to TIP36C.A 15.9 MAXB 4.8 MAXIcmax:25A. _C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdH 9.0MAXIMUM RATING (Ta=25 )I 4.5P PT J 2.0

NPN NPN Epitaxial Silicon Transistor RTIP35C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltageV =100V (min) CEO CEO Low collector-emitter saturation voltage TIP36C Complementa

TIP35CT4TLSilicon NPN Power TransistorDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP35CDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

isc Silicon NPN Power Transistor TIP35CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP36CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = 1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gen