KTC2876 Datasheet and Replacement

KTC2876SEMICONDUCTORSILICON NPN TRANSISTOR TECHNICAL DATAEPITAXIAL PLANAR TYPEFOR MUTING AND SWITCHING APPLICATION.FEATURES BHigh Emitter-Base Voltage : VEBO=25V(Min.)High Reverse hFE: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)DIM MILLIMETERSOA 3.20 MAXLow on Resistance : RON=1(Typ.), (IB=5mA)HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C

SEMICONDUCTORKTC2875TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.EFEATURES L B LHigh Emitter-Base Voltage : VEBO=25V(Min.)DIM MILLIMETERS_+A 2.93 0.20High Reverse hFEB 1.30+0.20/-0.15C 1.30 MAX: Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA)23 D 0.40+0.15/-0.05Low on Resistance : RON=1(Typ.), (IB=5mA) E 2.40+0.30/-0.20

KTC2874SEMICONDUCTORSILICON NPN TRANSISTOR TECHNICAL DATAEPITAXIAL PLANAR TYPEFOR MUTING AND SWITCHING APPLICATION.B CFEATURES High Emitter-Base Voltage : VEBO=25V(Min.)High Reverse hFEN DIM MILLIMETERSA 4.70 MAXE: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) KB 4.80 MAXGC 3.70 MAXDLow on Resistance : RON=1 (Typ.), (IB=5mA)D 0.45E 1.00F 1.27G 0.85H 0.45

SEMICONDUCTOR KTC2815D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION.POWER SWITCHING APPLICATION.AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage _B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=0.5V(Max.) (IC=1A) _D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1High Speed Switching Time : tstg=1 S(Typ.)H 1.00 MAX

SEMICONDUCTOR KTC2814TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION.ABPOWER SWITCHING APPLICATION.DCEFEATURESFLow Collector Saturation Voltage: VCE(sat)=0.5V(Max.) (IC=1A)GHigh Speed Switching Time : tstg=1.0 S(Typ.)HComplementary to KTA1715.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

SEMICONDUCTOR KTC2803TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY, HIGH FREQUENCY ABPOWER AMPLIFIER DCEFEATURES FComplementary to KTA1704.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 120 V_+F 11.0 0.3G 2.9 MAXVCEOColl

SEMICONDUCTOR KTC2825DTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLED DRIVE APPLICATIONFEATURESA HAdoption of MBIT processes.C JLow collector-to-emitter saturation voltage.DIM MILLIMETERS_Fast switching speed. A 6.6 0.2+_6.1 0.2B +_C 5.0 0.2+_D 1.1 0.2+_2.7 0.2E +_+F 2.3 0.1M G 1.0 MAX_2.3 + 0.2HN_+J 0.5 0.1_G K 1.0

SEMICONDUCTOR KTC2801TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORCOLOR TV CHROMA OUTPUT APPLICATION.ABCOLOR TV HORIZONTAL DRIVE APPLICATION.DCEFEAUTRESFHigh Voltage : VCEO=300V.Small Collector Output Capacitance : Cob=4.0pF(Max.).GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LMAXIMUM RATING (Ta=25 ) C 0.7_+D 3.2 0.1CHARACTERISTIC SYMBOL RATING UNITE 3.5

SEMICONDUCTOR KTC2804TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) 0.8V (IC=2A, IB=0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=2V, IC=0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTA1705.KB 5.8LC 0.7_+D 3.2 0

SEMICONDUCTOR KTC2800TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTA1700.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 160 V_+F 11.0 0.3G