2N1189 Specs and Replacement
Type Designator: 2N1189
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO5
2N1189 Substitution
- BJT ⓘ Cross-Reference Search
2N1189 datasheet
Detailed specifications: 2N1183B, 2N1184, 2N1184A, 2N1184B, 2N1185, 2N1186, 2N1187, 2N1188, BC327, 2N118A, 2N119, 2N1190, 2N1191, 2N1192, 2N1193, 2N1194, 2N1195
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