KRA109 Specs and Replacement
Type Designator: KRA109
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-92
KRA109 Substitution
- BJT ⓘ Cross-Reference Search
KRA109 datasheet
SEMICONDUCTOR KRA107M KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 ... See More ⇒
SEMICONDUCTOR KRA107S KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 With Built-in Bias Resistors. B 1.30+0.20/-0.15 C 1.30 MAX Simplify Circuit Design. 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30... See More ⇒
SEMICONDUCTOR KRA107 KRA109 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 EQUIVALENT CI... See More ⇒
Detailed specifications: KRA105, KRA105S, KRA106, KRA106S, KRA107, KRA107S, KRA108, KRA108S, 2SC5200, KRA109S, KRA110, KRA110S, KRA111, KRA111S, KRA112, KRA112S, KRA113
Keywords - KRA109 pdf specs
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History: BCAP09C | DTA144WS3 | 2SC2652 | 2T625A-2 | 2SC2655O | 2T385A-2 | 2T385AM-2
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