KRA305V Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA305V
SMD Transistor Code: PE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: VSM
KRA305V Transistor Equivalent Substitute - Cross-Reference Search
KRA305V Datasheet (PDF)
kra301e-kra306e.pdf
SEMICONDUCTOR KRA301E~KRA306ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_
kra301v-kra306v 1.pdf
SEMICONDUCTOR KRA301V~KRA306VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05
kra307-kra308.pdf
SEMICONDUCTOR KRA307~KRA308TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2Simplify Circuit Design_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.3+0.10/-0.05_
kra307e-kra309e.pdf
SEMICONDUCTOR KRA307E~KRA309ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_High Pack
kra302vs.pdf
SEMICONDUCTOR KRA302VSTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05
kra301-kra306.pdf
SEMICONDUCTOR KRA301~KRA306TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design.B 1.25 + 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process. 31D 0.3+0.10/-0.05_
kra307v-kra309v 1.pdf
SEMICONDUCTOR KRA307V~KRA309VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 +
kra309.pdf
SEMICONDUCTOR KRA309TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2Simplify Circuit Design_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.3+0.10/-0.05_+Hi
kra307e-kra309e 1.pdf
SEMICONDUCTOR KRA307E~KRA309ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_H
kra307v-kra309v.pdf
SEMICONDUCTOR KRA307V~KRA309VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05_
kra301v-kra306v.pdf
SEMICONDUCTOR KRA301V~KRA306VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
