KRA308V Specs and Replacement
Type Designator: KRA308V
SMD Transistor Code: PI
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: VSM
- BJT ⓘ Cross-Reference Search
KRA308V datasheet
8.1. Size:363K kec
kra307-kra308.pdf 
SEMICONDUCTOR KRA307 KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 Simplify Circuit Design _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.3+0.10/-0.05 _ ... See More ⇒
9.1. Size:67K kec
kra301e-kra306e.pdf
SEMICONDUCTOR KRA301E KRA306E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ ... See More ⇒
9.2. Size:107K kec
kra301v-kra306v 1.pdf
SEMICONDUCTOR KRA301V KRA306V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 ... See More ⇒
9.3. Size:87K kec
kra307e-kra309e.pdf
SEMICONDUCTOR KRA307E KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ High Pack... See More ⇒
9.4. Size:347K kec
kra302vs.pdf
SEMICONDUCTOR KRA302VS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05... See More ⇒
9.5. Size:388K kec
kra301-kra306.pdf
SEMICONDUCTOR KRA301 KRA306 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 + 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _ ... See More ⇒
9.6. Size:389K kec
kra307v-kra309v 1.pdf
SEMICONDUCTOR KRA307V KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + ... See More ⇒
9.7. Size:390K kec
kra309.pdf
SEMICONDUCTOR KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 Simplify Circuit Design _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.3+0.10/-0.05 _ + Hi... See More ⇒
9.8. Size:388K kec
kra307e-kra309e 1.pdf
SEMICONDUCTOR KRA307E KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ H... See More ⇒
9.9. Size:88K kec
kra307v-kra309v.pdf
SEMICONDUCTOR KRA307V KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ ... See More ⇒
9.10. Size:422K kec
kra301v-kra306v.pdf
SEMICONDUCTOR KRA301V KRA306V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3... See More ⇒
Detailed specifications: KRA305E, KRA305V, KRA306, KRA306E, KRA306V, KRA307E, KRA307V, KRA308E, TIP42, KRA309E, KRA309V, KRA310, KRA310E, KRA310V, KRA311, KRA311E, KRA311V
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