All Transistors. 2N60 Datasheet

 

2N60 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N60

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.18 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.6 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO5

2N60 Transistor Equivalent Substitute - Cross-Reference Search

 

2N60 Datasheet (PDF)

1.1. svf2n60m-f-t-d.pdf Size:682K _update

2N60
2N60

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

1.2. 2n6043g 2n6042g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

 1.3. 2n6034g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.4. 2n6043g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

 1.5. 2n6038g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.6. 2n6042g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

1.7. 2n6035g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.8. 2n6036g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.9. 2n6052g.pdf Size:132K _upd

2N60
2N60

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc 12 AMPERE • Collector-Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON • Monolit

1.10. 2n6039g.pdf Size:109K _upd

2N60
2N60

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors Plastic Darlington complementary silicon power transistors are 4.0 AMPERES DARLINGTON designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ratings

1.11. 2n6040g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

1.12. 2n6035g 2n6036g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.13. 2n6034g 2n6038g.pdf Size:140K _upd

2N60
2N60

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http://onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ra

1.14. 2n6040g 2n6045g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

1.15. 2n6045g.pdf Size:83K _upd

2N60
2N60

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain - hFE = 2500 (

1.16. irfp22n60c3pbf.pdf Size:219K _upd-mosfet

2N60
2N60

PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy

1.17. irfp22n60k irfp22n60kpbf.pdf Size:177K _upd-mosfet

2N60
2N60

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ()VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

1.18. mtp2n60erev2a.pdf Size:219K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N60E/D Designer's? Data Sheet MTP2N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.19. 2n6027 2n6028.pdf Size:120K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6027/D 2N6027 Programmable 2N6028 Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to program unijunction characteristics such as PUTs RBB, ?, IV, and IP by merely selecting two resistor values. Application includes 40 VOLTS thyristor-trigger, oscillator, pulse an

1.20. 2n6035 2n6036 2n6038 2n6039.pdf Size:243K _motorola

2N60
2N60

Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Plastic Darlington Complementary Silicon Power PNP Transistors 2N6035 . . . designed for generalpurpose amplifier and lowspeed switching applications. High DC Current Gain 2N6036* hFE = 2000 (Typ) @ IC = 2.0 Adc NPN CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6038

1.21. 2n5630 2n6030 2n5631 2n6031.pdf Size:253K _motorola

2N60
2N60

Order this document MOTOROLA by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage High Power 2N5631 Transistors PNP . . . designed for use in high power audio amplifier applications and high voltage 2N6030 switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031 VCEO(sus) = 120 Vdc 2N5630, 2N6030 VCEO(sus) = 140 Vdc 2N5631, 2N6031 High D

1.22. mtp2n60e.pdf Size:190K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N60E/D Designer's? Data Sheet MTP2N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.23. 2n6071 2n6073 2n6075.pdf Size:118K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6071/D * 2N6071A,B * 2N6073A,B Sensitive Gate Triacs 2N6075A,B* Silicon Bidirectional Thyristors *Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state

1.24. mtb2n60e.pdf Size:271K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB2N60E/D Designer's? Data Sheet MTB2N60E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 2.0 AMPERES 600 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 3.8 OHM scheme to provide enhanced voltageblocking cap

1.25. 2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf Size:241K _motorola

2N60
2N60

Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Complementary Silicon Transistors thru . . . designed for generalpurpose amplifier and lowspeed switching applications. * 2N6042 High DC Current Gain NPN hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043 VCEO(sus) = 60 Vdc (Min)

1.26. 2n6049.pdf Size:251K _motorola

2N60
2N60

1.27. 2n6055 2n6056.pdf Size:209K _motorola

2N60
2N60

Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary 2N6056* Silicon Power Transistors *Motorola Preferred Device . . . designed for generalpurpose amplifier and low frequency switching applications. DARLINGTON High DC Current Gain 8 AMPERE hFE = 3000 (Typ) @ IC = 4.0 Adc COMPLEMENTARY CollectorEmitter Sustaining Voltage

1.28. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:275K _motorola

2N60
2N60

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for generalpurpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (Min) 2N6050,

1.29. 2n6071 2n6073 2n6075 .pdf Size:157K _motorola

2N60
2N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6071/D * 2N6071,A,B * 2N6073,A,B Sensitive Gate Triacs 2N6075,A,B* Silicon Bidirectional Thyristors *Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon TRIACs gate controlled s

1.30. php2n60 1.pdf Size:50K _philips2

2N60
2N60

Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------------- PowerMOS transistor PHP2N60 ---------------------------------------------------------------------------------------------------------------------------------------------------------- GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enh

1.31. php2n60e 3.pdf Size:76K _philips2

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2N60

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) ? 6 ? s GENERAL DESCRIPTION N-channel, enhancement

1.32. php2n60e phb2n60e phd2n60e.pdf Size:75K _philips2

2N60
2N60

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 1.9 A g • Low thermal resistance RDS(ON) ≤ 6 Ω s GENERAL DESCRIPTION N-chan

1.33. phx2n60e 3.pdf Size:64K _philips2

2N60
2N60

Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 A g Isolated package RDS(ON) ? 6 ? s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhancement mode PIN D

1.34. stp2n60.pdf Size:388K _st

2N60
2N60

STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP2N60 600 V < 3.5 ? 2.9 A STP2N60FI 600 V < 3.5 ? 2.2 A TYPICAL R = 3.2 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH SPEED SWITCHIN

1.35. sdt2n60.pdf Size:172K _st

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2N60

STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2NA60 600 V < 4 ? 2.3 A TYPICAL R = 3.3 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK

1.36. stk2n60-.pdf Size:178K _st

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2N60

STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STK2NA60 600 V < 8 ? 1.9 A TYPICAL R = 7.2 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW INTRINSIC CAPACITANCES 1 3 GATE GHARGE MINIMIZED 2 1 REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION SOT-82 SOT-194 This series of PO

1.37. 2n6059.pdf Size:42K _st

2N60
2N60

2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted i

1.38. 2n6036 2n6039.pdf Size:243K _st

2N60
2N60

2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 1 2 3 DESCRIPTION The 2N6036 and 2N6039 are complementary SOT-32 silicon power Darlington transistors moun

1.39. stk2n60.pdf Size:184K _st

2N60
2N60

STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STK2N80 800 V < 7 ? 2.1 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW INPUT CAPACITANCE 1 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED CHARACTERIZATION SOT-82 SOT-194 APPLICATIONS (option) HIGH CURRENT, HIGH SPEED SW

1.40. 2n6034 2n6035 2n6036 2n6037 2n6038 2n6039.pdf Size:174K _st

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2N60

1.41. fch22n60n.pdf Size:379K _fairchild_semi

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2N60

June 2010 TM SupreMOS FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this adva

1.42. fdp12n60nz fdpf12n60nz.pdf Size:284K _fairchild_semi

2N60
2N60

September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description RDS(on) = 0.53? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 26nC) DOMS technology. Low Crss ( Typ. 12pF) This advance technology has been esp

1.43. fcp22n60n fcpf22n60nt.pdf Size:757K _fairchild_semi

2N60
2N60

July 2009 SupreMOS TM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing

1.44. fqp12n60c fqpf12n60c .pdf Size:1170K _fairchild_semi

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2N60

September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to

1.45. fqp12n60c.pdf Size:1701K _fairchild_semi

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2N60

March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to

1.46. ssp2n60b sss2n60b.pdf Size:862K _fairchild_semi

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2N60

SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to • Fast swit

1.47. fch072n60f f085.pdf Size:633K _fairchild_semi

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2N60

November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

1.48. fch072n60.pdf Size:765K _fairchild_semi

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2N60

August 2014 FCH072N60 N-Channel SuperFET® II MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 66 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 95 nC) and lower

1.49. 2n6076.pdf Size:29K _fairchild_semi

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2N60

DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.145 1 2 3 (3.429 - 3.683) BVCEO . . . . 25 V (Min) 1 2 3 B C E hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES LOGOXYY 0.175 - 0.185 Storage Temperature -55 Degrees C to 150 Degrees C (4.450 - 4.700) 2N Opera

1.50. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

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2N60

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

1.51. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

1.52. ssw2n60b ssi2n60b.pdf Size:648K _fairchild_semi

2N60

1.53. fca22n60n.pdf Size:527K _fairchild_semi

2N60
2N60

July 2009 SupreMOS TM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced

1.54. fqpf12n60.pdf Size:549K _fairchild_semi

2N60
2N60

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially t

1.55. hgtg12n60c3d.pdf Size:120K _fairchild_semi

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HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i

1.56. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

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HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

1.57. fch072n60f.pdf Size:582K _fairchild_semi

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December 2013 FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 65 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno

1.58. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi

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April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to Fa

1.59. fqd2n60ctm.pdf Size:557K _fairchild_semi

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November 2013 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor’s proprietary • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.3 pF)

1.60. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi

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January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-

1.61. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

1.62. fqpf12n60c.pdf Size:1123K _fairchild_semi

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November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored

1.63. irfp22n60k.pdf Size:123K _international_rectifier

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PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m? 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Char

1.64. ssp2n60a.pdf Size:939K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.65. ssw2n60a.pdf Size:509K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 3.892 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

1.66. sss2n60a.pdf Size:507K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.67. ssr2n60a.pdf Size:505K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.68. sgr2n60ufd.pdf Size:323K _samsung

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IGBT CO-PAK SGR2N60UFD FEATURES D-PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=1.2A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 45nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristic

1.69. spd02n60.pdf Size:82K _siemens

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SPD02N60 SPU02N60 Preliminary data SIPMOS? Power Transistor N-Channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code SPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 ? SPU02N60 P-TO251 Q67040-S4127-A2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A

1.70. sihb22n60s.pdf Size:146K _vishay

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1.71. sihf22n60s.pdf Size:163K _vishay

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1.72. sihg22n60s.pdf Size:177K _vishay

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1.73. 2n5172 2n6076 mps5172 mps6076.pdf Size:70K _central

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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.74. 2n5629 2n5630 2n6029 2n6030.pdf Size:67K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.75. sgb02n60 rev2 3.pdf Size:792K _infineon

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SGB02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D?-PAK) - paral

1.76. skb02n60 rev2 2g.pdf Size:1150K _infineon

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2N60

SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight parameter dis

1.77. spb02n60s5 rev.2.4.pdf Size:343K _infineon

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2N60

SPB02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 ? New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB02N60S5 PG-TO263 Q67040-S4212 02N60S5 Maximum Ratings Parameter Symbol Value Un

1.78. skp02n60 rev2 2g[1].pdf Size:349K _infineon

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2N60

SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature

1.79. spp02n60s5 rev.2.6.pdf Size:935K _infineon

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2N60

SPP02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 ? New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 02N60S5 SPP02N60S5 PG-TO220 Q67040-S4181 Maximum Ratings

1.80. spp02n60c3 rev.2.7.pdf Size:456K _infineon

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P VDS Tjmax ? G G

1.81. sgp02n60 sgd02n60 rev2 3g.pdf Size:353K _infineon

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SGP02N60 SGD02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK

1.82. spd02n60c3 spu02n60c3.pdf Size:1013K _infineon

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2N60

VDS Tjmax ? G G G G

1.83. spd02n60s5 spu02n60s5 rev.2.5.pdf Size:882K _infineon

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2N60

SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 ? New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO251 Q67040-S4226 SP

1.84. sps02n60c3 rev22.pdf Size:1186K _infineon

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S VDS Tjmax ? G 1-3-11 S G -3-11

1.85. spb02n60c3 rev.2.4.pdf Size:545K _infineon

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2N60

VDS Tjmax ? G G

1.86. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

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IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

1.87. ixgn72n60c3h1.pdf Size:223K _ixys

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2N60

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ? VCE(sat) ? ?? 2.50V ? ? tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 78 A C IC110

1.88. ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf Size:192K _ixys

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IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 600 600 V G VDGR TJ = 25C to 150C; RGS = 1 M? 600 600

1.89. ixgx72n60c3h1.pdf Size:213K _ixys

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2N60

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ? VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G G D VGES Continuous 20 V C ES Tab VGEM Transient 30 V IC25 TC = 25C (Limited by Leads) 75 A G = Gate C

1.90. ixfn82n60p.pdf Size:152K _ixys

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IXFN 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? 75 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 600 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transie

1.91. ixfc22n60p.pdf Size:231K _ixys

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2N60

IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET ? ? RDS(on) ? 360 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

1.92. ixgh72n60c3.pdf Size:166K _ixys

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2N60

VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ? ? VCE(sat) ? 2.5V ? ? tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Tab E IC25 TC = 25C (Limited by Leads) 75 A IC110 TC = 110C (Chip

1.93. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

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2N60

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

1.94. ixgr72n60c3d1.pdf Size:214K _ixys

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TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ? VCE(sat) ? ?? 2.7V ? ? High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Isolated Tab E IC25 TC = 25C (Limited by Leads)

1.95. ixfa22n60p3.pdf Size:179K _ixys

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2N60

Polar3TM HiperFETTM VDSS = 600V IXFA22N60P3 ID25 = 22A Power MOSFETs IXFP22N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 TO-220AB (IXFP) Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G D Tab S G S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 600 V S VDGR

1.96. ixgr32n60cd1.pdf Size:571K _ixys

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2N60

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25C45 A E Is

1.97. ixfl82n60p.pdf Size:205K _ixys

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2N60

IXFL 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? 78 m? ? ? ? ? ? ? ISOPLUS264TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISOPLUS264 (IXFL) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G

1.98. ixfb82n60p.pdf Size:101K _ixys

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2N60

IXFB 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? ? ? 75 m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 200 ns ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25

1.99. ixgk72n60a3h1 ixgx72n60a3h1.pdf Size:229K _ixys

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2N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ? VCE(sat) ? ?? 1.35V ? ? tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V (TAB) G VGES Continuous 20 V C E VGEM Transient 30

1.100. 2n6027 2n6028.pdf Size:148K _onsemi

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2N60

2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction http://onsemi.com characteristics such as RBB, ?, IV, and IP by merely selecting two resistor values. Application includes thyristortrigger, oscillator, pulse PUTs and timing circuits. These devices may also be used in

1.101. ndf02n60z ndp02n60z ndd02n60z.pdf Size:143K _onsemi

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2N60

NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features http://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested 600 V 4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) D (2) Rating Symb

1.102. 2n60l.pdf Size:216K _utc

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2N60

UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

1.103. 12n60.pdf Size:375K _utc

2N60
2N60

UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior

1.104. 2n60.pdf Size:269K _utc

2N60
2N60

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

1.105. 22n60.pdf Size:238K _utc

2N60
2N60

UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) = 0.35? * Ultra Low Gate Charge ( T

1.106. 2n60k.pdf Size:220K _utc

2N60
2N60

UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

1.107. 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf Size:217K _comset

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2N60

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABS

1.108. 2n6055-2n6053.pdf Size:159K _comset

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2N60

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Voltage

1.109. hgtg12n60c3d.pdf Size:106K _harris_semi

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2N60

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device

1.110. hgtp12n60c3.pdf Size:188K _harris_semi

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2N60

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR

1.111. hgtg12n60c3d .pdf Size:102K _harris_semi

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2N60

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high

1.112. hgtg12n60d1d.pdf Size:46K _harris_semi

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2N60

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time <500ns GATE Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching

1.113. 2n6053-56.pdf Size:172K _mospec

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2N60

A A A A

1.114. 2n6040-45.pdf Size:199K _mospec

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2N60

A A A A

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2N60
2N60

 华晶分立器件 CS2N60(F) CS2N60(F)型VDMOS晶体管 1.概述与特点 CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管,主要用于电源适配器、充电器等各种功率开 关电路。 具有如下特点: ● 开关速度快 ● 通态电阻小 ● 可并联使用 ● 驱动简单 封装形式: 产品名称 封装形式 VDSS RDS(ON)MAX ID CS2N60 TO-220

1.116. 2n6032.pdf Size:290K _no

2N60
2N60

1.117. 2n6077.pdf Size:10K _semelab

2N60

2N6077 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 275V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.118. 2n6078.pdf Size:17K _semelab

2N60
2N60

2N6078 MECHANICAL DATA Dimensions in mm(inches) NPN MULTI - EPITAXIAL 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) POWER TRANSISTOR max. 4.08(0.161) rad. 1 2 FEATURES HIGH VOLTAGE LOW SATURATION VOLTAGES HIGH RELIABILITY 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) APPLICATIONS min. POWER SWITCHING CIRCUITS TO66(TO213AA) LINEAR A

1.119. 2n6079.pdf Size:10K _semelab

2N60

2N6079 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 350V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.120. tsm2n60 c07.pdf Size:163K _taiwansemi

2N60
2N60

1.121. 2n6093.pdf Size:24K _advanced-semi

2N60

2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75 OC 1 = Emitter & Diode Cathode TJ -65 OC to +200 OC 2 = Collector 3 = Base TSTG

1.122. 2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf Size:195K _bocasemi

2N60
2N60

A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.123. 2n6034-39.pdf Size:126K _cdil

2N60
2N60

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company (PNP) SILICON POWER DARLINGTON TRANSISTORS 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package E C B Designed for General -Purpose Amplifier & Low Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2n6034 2N6035

1.124. 2n6098 2n6099 2n6100 2n6101.pdf Size:106K _jmnic

2N60
2N60

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION · ·With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098

1.125. 2n6077 2n6078 2n6079.pdf Size:116K _jmnic

2N60
2N60

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION · ·With TO-66 package ·Low collector-emitter saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflection output stages of TV’s and CRT’s PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolut

1.126. 2n6058 2n6059.pdf Size:109K _jmnic

2N60
2N60

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (T

1.127. 2n6029 2n6030.pdf Size:104K _jmnic

2N60
2N60

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION ·With TO-3 package ·Complement to type 2N5629 2N5630 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS V

1.128. kf2n60d-i.pdf Size:386K _kec

2N60
2N60

KF2N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 power supplies. _

1.129. kf12n60p-f.pdf Size:898K _kec

2N60
2N60

KF12N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ·VDSS=600V, ID=12A

1.130. kf2n60p-f.pdf Size:415K _kec

2N60
2N60

KF2N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF2N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9 + 0

1.131. kf2n60l.pdf Size:1007K _kec

2N60
2N60

KF2N60L SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description B D DIM MILLIMETERS This planar stripe MOSFET has better characteristics, such as fast A 7.20 MAX switching time, low on resistance, low gate charge and excellent B 5.20 MAX C 0.60 MAX avalanche characteristics. It is mainly suitable for switching mode P D 2.50 MAX DEPTH:0.2 E 1.15 MAX p

1.132. kmb8d2n60qa.pdf Size:49K _kec

2N60
2N60

SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Back-light Inverter. H T D P G L FEATURES VDSS=60V, ID=8.2A. A Drain-Source ON Resistance. DIM MILLIMETERS A _ + RDS(ON)=22m

1.133. 2n6080 2n6084.pdf Size:279K _microsemi

2N60
2N60

1.134. 2n6031.pdf Size:117K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5631 Ў¤ High collector sustaining voltage Ў¤ High DC current gain Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter Collector

1.135. 2n6052.pdf Size:72K _inchange_semiconductor

2N60
2N60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6059 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching ap

1.136. 2n6098 2n6099 2n6100 2n6101.pdf Size:119K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETE

1.137. 2n6077 2n6078 2n6079.pdf Size:127K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ High breakdown voltage APPLICATIONS Ў¤ For horizontal deflection output stages of TV's and CRT's PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi

1.138. 2n6058 2n6059.pdf Size:131K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

1.139. 2n6034 2n6035 2n6036.pdf Size:123K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N6037/6038/6039 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6034 2N6035 2N6036 Absolute max

1.140. 2n6029 2n6030.pdf Size:131K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(T

1.141. 2n6049.pdf Size:130K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION ·With TO-66 package ·Complement to type 2N3054A APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL

1.142. 2n6055 2n6056.pdf Size:132K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbo

1.143. 2n6053 2n6054.pdf Size:131K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

1.144. 2n6057.pdf Size:105K _inchange_semiconductor

2N60
2N60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching appli

1.145. 2n6039.pdf Size:199K _inchange_semiconductor

2N60
2N60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2N6039 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 750(Min)@IC= 2A ·Complement to Type 2N6036 APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PAR

1.146. 2n6043 2n6044 2n6045.pdf Size:73K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6043 2N6044 2N6045 DESCRIPTION ·With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS ·For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;conne

1.147. 2n6059.pdf Size:175K _inchange_semiconductor

2N60
2N60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Complement to type 2N6052 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching app

1.148. 2n6037 2n6038 2n6039.pdf Size:121K _inchange_semiconductor

2N60
2N60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6037 2N6038 2N6039 DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maxim

1.149. ixgh32n60c.pdf Size:81K _igbt

2N60
2N60

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =

1.150. ixgn72n60c3h1.pdf Size:221K _igbt

2N60
2N60

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ≤ VCE(sat) ≤ ≤£ 2.50V ≤ ≤ tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC

1.151. ixgh12n60cd1.pdf Size:59K _igbt

2N60
2N60

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Co

1.152. ixgp12n60c.pdf Size:94K _igbt

2N60
2N60

VCES = 600 V IXGA 12N60C HiPerFASTTM IGBT IC25 = 24 A IXGP 12N60C VCE(sat)= 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 AA (IXGA) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V ↑ C (tab) E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-220 AB IC90 TC = 90°C12 A (IXGP) ICM TC = 25°C, 1 ms 48

1.153. sgb02n60.pdf Size:790K _igbt

2N60
2N60

 SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

1.154. ixgn72n60a3.pdf Size:182K _igbt

2N60
2N60

Preliminary Technical Information VCES = 600V IXGN72N60A3 GenX3TM 600V IGBT IC110 = 68A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC

1.155. ixgh12n60c.pdf Size:54K _igbt

2N60
2N60

IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C24 A C E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collecto

1.156. sgp02n60.pdf Size:350K _igbt

2N60
2N60

 SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

1.157. ixgk72n60a3h1.pdf Size:227K _igbt

2N60
2N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V (TAB) G VGES Continuous ±20 V C E

1.158. ixgp12n60cd1.pdf Size:69K _igbt

2N60
2N60

IXGA 12N60CD1 HiPerFASTTM IGBT VCES = 600 V IXGP 12N60CD1 LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 (IXGA) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-220 AB ICM TC = 25°C,

1.159. ixgh32n60a.pdf Size:125K _igbt

2N60
2N60

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.160. ixgh72n60b3.pdf Size:186K _igbt

2N60
2N60

GenX3TM B3-Class VCES = 600V IXGH72N60B3 IC110 = 72A IGBTs IXGT72N60B3 ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 90ns Medium Speed low Vsat PT IGBTs 5-40 kHz Switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC25 TC = 2

1.161. ixgh12n60b.pdf Size:33K _igbt

2N60
2N60

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collector,

1.162. ixgh32n60bu1.pdf Size:137K _igbt

2N60
2N60

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C60 A E = Emitter, TAB = Collector IC90 TC = 90°C32 A IC

1.163. ixgh72n60c3.pdf Size:164K _igbt

2N60
2N60

VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Tab E IC25 TC = 25°C (Limited by Leads) 75 A IC

1.164. ixgh72n60a3.pdf Size:198K _igbt

2N60
2N60

IXGH72N60A3 VCES = 600V GenX3TM 600V IGBT IXGT72N60A3 IC110 = 72A Ultra Low Vsat PT IGBT for ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ up to 5kHz switching tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C C (TAB) E IC25 TC = 25°C (lim

1.165. skp02n60.pdf Size:347K _igbt

2N60
2N60

 SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggednes

1.166. ixgk72n60b3h1.pdf Size:221K _igbt

2N60
2N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V (

1.167. ixgh32n60cd1.pdf Size:160K _igbt

2N60
2N60

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D

1.168. ixgh32n60b.pdf Size:34K _igbt

2N60
2N60

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C60 A E IC90 TC = 90°C32 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 120 A E = Emitter, TAB = Col

1.169. ixgh12n60bd1.pdf Size:34K _igbt

2N60
2N60

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collect

1.170. ixgp12n60b.pdf Size:69K _igbt

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IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G E VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-263 AA (IXGA) ICM TC =

1.171. ixgh32n60bd1.pdf Size:125K _igbt

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IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.172. skb02n60.pdf Size:1144K _igbt

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 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight

1.173. sgd02n60.pdf Size:350K _igbt

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 SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

1.174. ixgr72n60b3d1.pdf Size:210K _igbt_a

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Preliminary Technical Information GenX3TM B3-Class VCES = 600V IXGR72N60B3D1 IGBT w/Diode IC110 = 40A ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES

1.175. ixgx72n60c3h1.pdf Size:211K _igbt_a

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VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ≤ VCE(sat) ≤ ≤£ 2.5V ≤ ≤ tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G G D VGES Continuous ±20 V C ES Tab VGEM Transient ±30 V IC25 TC = 25°C (Limited by L

1.176. ixgt72n60a3.pdf Size:198K _igbt_a

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IXGH72N60A3 VCES = 600V GenX3TM 600V IGBT IXGT72N60A3 IC110 = 72A Ultra Low Vsat PT IGBT for ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ up to 5kHz switching tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C C (TAB) E IC25 TC = 25°C (lim

1.177. ixgr72n60c3.pdf Size:221K _igbt_a

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Preliminary Technical Information TM VCES = 600V GenX3 600V IGBT IXGR72N60C3 IC110 = 35A (Electrically Isolated Tab)  VCE(sat)  £ 2.7V   tfi(typ) = 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V G C Isolated Tab VGES Co

1.178. ixgx72n60a3h1.pdf Size:227K _igbt_a

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Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V (TAB) G VGES Continuous ±20 V C E

1.179. ixgt72n60b3.pdf Size:186K _igbt_a

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GenX3TM B3-Class VCES = 600V IXGH72N60B3 IC110 = 72A IGBTs IXGT72N60B3 ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 90ns Medium Speed low Vsat PT IGBTs 5-40 kHz Switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC25 TC = 2

1.180. ixgr72n60a3.pdf Size:183K _igbt_a

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VCES = 600V GenX3TM 600V IGBT IXGR72N60A3 IC110 = 52A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 5kHz switching tfi(typ) = 250ns Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 52 A G ICM TC

1.181. ixgr72n60b3h1.pdf Size:219K _igbt_a

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Preliminary Technical Information TM VCES = 600V GenX3 600V IGBT IXGR72N60B3H1 IC110 = 40A (Electrically Isolated Back Surface) ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continu

1.182. ixgr72n60c3d1.pdf Size:211K _igbt_a

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TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ≤ VCE(sat) ≤ ≤£ 2.7V ≤ ≤ High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Isolated Tab E IC25 TC = 25

1.183. ixsn62n60u1.pdf Size:71K _igbt_a

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IGBT with Diode IXSN 62N60U1 VCES = 600 V IC25 = 90 A VCE(sat) = 2.5 V Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 2 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V 4 VGEM Transient ±30 V 3 IC25 TC = 25°C90 A 1 = Emitter , 3 = Collector IC90 TC = 90°C50 A 2 = Gate, 4

1.184. ixgt32n60bd1.pdf Size:125K _igbt_a

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2N60

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.185. ixgr32n60cd1.pdf Size:569K _igbt_a

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VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°

1.186. ixgt32n60cd1.pdf Size:163K _igbt_a

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2N60

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D

1.187. ixgr12n60c.pdf Size:54K _igbt_a

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IXGR 12N60C VCES = 600 V HiPerFASTTM IGBT IC25 = 15 A ISOPLUS247TM VCE(sat)= 2.7 V (Electrically Isolated Back Surface) tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25°C15 A IC90 TC = 90°C

1.188. ixsn52n60au1.pdf Size:150K _igbt_a

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IGBT with Diode IXSN 52N60AU1 VCES = 600 V IC25 = 80 A Combi Pack VCE(sat) = 3 V 3 Short Circuit SOA Capability 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25°C to 150°C 600 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30 V 4 IC25 TC = 25°C80 A 3 IC90 TC = 90°C40 A 1 = Emitter , 3 = Collector IC

1.189. ixgx72n60b3h1.pdf Size:221K _igbt_a

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Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V (

1.190. ixgr32n60c.pdf Size:536K _igbt_a

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IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C Isolated Backside* VGEM Transie

1.191. ixgr72n60a3h1.pdf Size:219K _igbt_a

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2N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGR72N60A3H1 w/Diode IC110 = 52A ≤ VCE(sat) ≤ ≤£ 1.35V ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±

1.192. ixgt32n60c.pdf Size:81K _igbt_a

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IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =

1.193. 2n60p 2n60f 2n60i 2n60d.pdf Size:782K _wietron

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2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched m

1.194. h02n60s.pdf Size:75K _hsmc

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Spec. No. : MOS200504 HI-SINCERITY Issued Date : 2005.05.01 Revised Date : 2005.09.28 MICROELECTRONICS CORP. Page No. : 1/6 H02N60S Series Pin Assignment H02N60S Series Tab 3-Lead Plastic TO-252 Package Code: J N-Channel Power Field Effect Transistor Pin 1: Gate 3 Pin 2 & Tab: Drain 2 1 Pin 3: Source Tab 3-Lead Plastic TO-251 Description Package Code: I Pin 1: Gate This high v

1.195. h02n60.pdf Size:85K _hsmc

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Spec. No. : MOS200403 HI-SINCERITY Issued Date : 2004.07.01 Revised Date : 2005.09.28 MICROELECTRONICS CORP. Page No. : 1/7 H02N60 Series Pin Assignment H02N60 Series Tab 3-Lead Plastic TO-252 Package Code: J N-Channel Power Field Effect Transistor Pin 1: Gate 3 Pin 2 & Tab: Drain 2 1 Pin 3: Source Tab 3-Lead Plastic TO-251 Description Package Code: I Pin 1: Gate This high vol

1.196. h12n60.pdf Size:149K _hsmc

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Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 H12N60F H12N60F N-Channel Power MOSFET (600V,12A) 3-Lead TO-220FP) Plastic Package Package Code: F Applications Pin 1: Gate • Switch Mode Power Supply Pin 2: Drain Pin 3: Source • Uninterruptable Power Supply 3 2 1 • High Speed Power Switching

1.197. aod2n60a.pdf Size:428K _aosemi

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AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.198. aoi2n60a.pdf Size:428K _aosemi

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AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.199. aotf2n60.pdf Size:160K _aosemi

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2N60

AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 4.4Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.200. aowf12n60.pdf Size:262K _aosemi

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2N60

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.55Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a

1.201. aotf12n60fd.pdf Size:590K _aosemi

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.202. aoy2n60.pdf Size:394K _aosemi

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AOY2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power

1.203. aob12n60fd.pdf Size:590K _aosemi

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.204. aot12n60fd.pdf Size:590K _aosemi

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.205. aow12n60.pdf Size:262K _aosemi

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2N60

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.55Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a

1.206. aod2n60.pdf Size:327K _aosemi

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2N60

AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 4.4Ω By providing low RDS(on), Ciss and Crss along with

1.207. aotf12n60.pdf Size:450K _aosemi

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2N60

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

1.208. aot2n60.pdf Size:160K _aosemi

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AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 4.4Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.209. aou2n60a.pdf Size:428K _aosemi

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AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.210. aot12n60.pdf Size:450K _aosemi

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2N60

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

1.211. aou2n60.pdf Size:327K _aosemi

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2N60

AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 4.4Ω By providing low RDS(on), Ciss and Crss along with

1.212. aoi2n60.pdf Size:385K _aosemi

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2N60

AOI2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOI2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 700V@150℃ high levels of performance and robustness in popular AC- ID (at VGS=10V) 2A DC applications. RDS(ON) (at VGS=10V) < 4.4Ω By providing low RDS(on), Ciss and Crss along with guaranteed avalanc

1.213. ap02n60j.pdf Size:102K _a-power

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AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 600V D Ў 100% Avalanche Test RDS(ON) 8? Ў Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-h

1.214. ap02n60h.pdf Size:102K _a-power

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AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 600V D Ў 100% Avalanche Test RDS(ON) 8? Ў Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-h

1.215. ap02n60i-a.pdf Size:175K _a-power

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AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 8Ω ▼ Simple Drive Requirement ID 2A G ▼ RoHS Compliant & Halogen-Free S Description AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

1.216. ap02n60h-h.pdf Size:246K _a-power

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AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 700V D Ў Lower Gate Charge RDS(ON) 8.8? Ў Fast Switching Characteristic ID 1.4A G Ў Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suit

1.217. ap02n60p-a-hf.pdf Size:56K _a-power

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AP02N60P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V Ў Fast Switching Characteristics RDS(ON) 8? Ў Simple Drive Requirement ID 2A Ў RoHS Compliant & Halogen-Free G D TO-220 S Description D The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited f

1.218. ap02n60t-h-hf.pdf Size:131K _a-power

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AP02N60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 700V D Ў Fast Switching Characteristics RDS(ON) 9? Ў Simple Drive Requirement ID 0.3A G Ў RoHS Compliant & Halogen-Free S S Description D Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on-resista

1.219. ap02n60i.pdf Size:108K _a-power

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AP02N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching RDS(ON) 8? Ў Simple Drive Requirement ID 2A G S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high c

1.220. ap02n60h-hf ap02n60j-hf.pdf Size:98K _a-power

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AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Lower Gate Charge RDS(ON) 8Ω ▼ Simple Drive Requirement ID 1.6A G ▼ RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC

1.221. ap02n60h-h-hf ap02n60j-h-hf.pdf Size:65K _a-power

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AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 8.8Ω ▼ Simple Drive Requirement ID 1.4A G ▼ RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and

1.222. ap02n60j-h.pdf Size:246K _a-power

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AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 700V D Ў Lower Gate Charge RDS(ON) 8.8? Ў Fast Switching Characteristic ID 1.4A G Ў Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suit

1.223. ap02n60p.pdf Size:69K _a-power

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AP02N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Repetitive Avalanche Rated BVDSS 600V ▼ ▼ ▼ ▼Fast Switching RDS(ON) 8Ω ▼ ▼ ▼ ▼Simple Drive Requirement ID 2A ▼ ▼ ▼ ▼ RoHS Compliant ▼ ▼ ▼ G D TO-220 S Description D The TO-220 package is universally preferred for all commerci

1.224. ap02n60i-a-hf.pdf Size:56K _a-power

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AP02N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching Characteristic RDS(ON) 8? Ў Simple Drive Requirement ID 2A G Ў RoHS Compliant & Halogen-Free S Description The TO-220CFM package is widely preferred for all commercial- industrial applications. The device is suited for swit

1.225. ap02n60p-hf.pdf Size:55K _a-power

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AP02N60P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching Characteristics RDS(ON) 8? Ў Simple Drive Requirement ID 2A G Ў Halogen Free & RoHS Compliant S Description The TO-220 package is universally preferred for all commercial- G industrial applications. The device is suited for

1.226. ftu02n60b ftd02n60b.pdf Size:533K _ark-micro

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FTU02N60B/FTD02N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features  Low ON Resistance 600V 5.5Ω 1.9A  Low Gate Charge (typical 7.4nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information

1.227. sif2n60d 1.pdf Size:368K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS / N-CHANN

1.228. sif12n60c.pdf Size:293K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N60C

1.229. sif2n60c 1.pdf Size:368K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANN

1.230. sif2n60d.pdf Size:333K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF2N60D N- MOS 管/ N-CHANNEL POWER MOSFET SIF2N60D N

1.231. sif2n60c.pdf Size:333K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF2N60C N

1.232. jcs2n60.pdf Size:1199K _jilin_sino

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N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID 2.0 A VDSS 600 V Rdson 5 Ω (@Vgs=10V) Qg 15.3 nC APPLICATIONS 用途  High frequency switching  高频开关电源 mode power supply  电子镇流器  Electronic ballast  LED 电源  LED power supply 产品特性 FEATUR

1.233. jcs12n60t.pdf Size:1072K _jilin_sino

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N-CHANNEL MOSFET R JCS12N60T Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65Ω (@Vgs=10V) 39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100% avalanche tested Improved dv/dt capability

1.234. mtn2n60i3.pdf Size:337K _cystek

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Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp. Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 4.0Ω(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

1.235. mtn2n60j3.pdf Size:357K _cystek

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Spec. No. : C435J3 Issued Date : 2009.01.20 CYStech Electronics Corp. Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 4.0Ω(typ.) MTN2N60J3 ID : 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

1.236. mtn12n60fp.pdf Size:453K _cystek

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Spec. No. : C743FP Issued Date : 2011.05.09 CYStech Electronics Corp. Revised Date : 2014.05.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS :600V RDS(ON) : 0.6Ω typ. MTN12N60FP ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.237. mtn12n60e3.pdf Size:304K _cystek

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Spec. No. : C743E3 Issued Date : 2009.10.08 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω MTN12N60E3 ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist

1.238. mtn2n60fp.pdf Size:284K _cystek

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Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 4.1Ω typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

1.239. 12n60 12n60f.pdf Size:2259K _goford

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GOFORD 12N60/12N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.65Ω 12A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

1.240. sdu02n60 sdd02n60.pdf Size:155K _samhop

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Green Product SDU/D02N60 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Max Rugged and reliable. 600V 2A 4.7 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERIN

1.241. ssf2n60g.pdf Size:451K _silikron

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 SSF2N60G Main Product Characteristics: VDSS 600V RDS(on) 3.5Ω (typ.) ID 2A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.242. ssf2n60.pdf Size:428K _silikron

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 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A TO220 Marking and pin Schematic diagram  Assignment  Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temper

1.243. ssf2n60d2.pdf Size:461K _silikron

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 SSF2N60D2 Main Product Characteristics: VDSS 600V RDS(on) 3.7Ω (typ.) ID 2A TO-252 Marking a nd pin Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.244. ssf12n60f.pdf Size:536K _silikron

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 SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

1.245. ssf2n60d.pdf Size:496K _silikron

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 SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8Ω (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.246. ssf2n60f.pdf Size:528K _silikron

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 SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recove

1.247. cs2n60 to-252.pdf Size:153K _can-sheng

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深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

1.248. ftd02n60c ftu02n60c.pdf Size:254K _inpower_semi

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FTD02N60C FTU02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-251 TO-252 S PART NUMBER PAC

1.249. ftp02n60c fta02n60c.pdf Size:237K _inpower_semi

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FTP02N60C FTA02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-220F TO-220 S PART NUMBER PA

1.250. bra2n60.pdf Size:371K _blue-rocket-elect

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BRA2N60(BRCS2N60A) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-262 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.251. br2n60.pdf Size:794K _blue-rocket-elect

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BR2N60(BRCS2N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.252. brf12n60.pdf Size:850K _blue-rocket-elect

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BRF12N60(BRCS12N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑

1.253. br12n60.pdf Size:988K _blue-rocket-elect

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BR12N60(BRCS12N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 该器件适用于高效电源模块,主动式 PFC 电路和基于

1.254. brd2n60.pdf Size:681K _blue-rocket-elect

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BRD2N60(BRCS2N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.255. bri2n60.pdf Size:924K _blue-rocket-elect

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BRI2N60(BRCS2N60I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

1.256. brl2n60.pdf Size:220K _blue-rocket-elect

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BRL2N60(CS2N60L) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

1.257. brf2n60.pdf Size:1204K _blue-rocket-elect

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BRF2N60(BRCS2N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.258. l2n600.pdf Size:395K _lrc

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LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage

1.259. hff2n60.pdf Size:231K _shantou-huashan

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N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF2N60 █ APPLICATIONSL TO-220F High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

1.260. hfh12n60.pdf Size:608K _shantou-huashan

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 Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

1.261. hfu2n60.pdf Size:211K _shantou-huashan

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N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 █ APPLICATIONSL TO-251 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

1.262. hfp2n60.pdf Size:210K _shantou-huashan

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N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

1.263. cs12n60 a8r.pdf Size:266K _crhj

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Silicon N-Channel Power MOSFET R ○ CS12N60 A8R General Description: VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.264. cs12n60f a9hd.pdf Size:354K _crhj

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Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.265. cs12n60 a8hd.pdf Size:356K _crhj

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Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.266. cs2n60 a3h.pdf Size:357K _crhj

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Silicon N-Channel Power MOSFET R ○ CS2N60 A3H General Description: VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.267. cs12n60 a8h.pdf Size:352K _crhj

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Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.268. cs12n60f a9h.pdf Size:252K _crhj

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2N60

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.269. cs2n60 a4t.pdf Size:356K _crhj

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Silicon N-Channel Power MOSFET R ○ CS2N60 A4T General Description: VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.270. cs2n60 a4h.pdf Size:355K _crhj

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Silicon N-Channel Power MOSFET R ○ CS2N60 A4H General Description: VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.271. cs2n60f a9h.pdf Size:334K _crhj

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Silicon N-Channel Power MOSFET R ○ CS2N60F A9H General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.272. cs2n60 a7h.pdf Size:334K _crhj

2N60
2N60

Silicon N-Channel Power MOSFET R ○ CS2N60 A7H General Description: VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.273. cs12n60f a9r.pdf Size:270K _crhj

2N60
2N60

Silicon N-Channel Power MOSFET R ○ CS12N60F A9R General Description: VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.274. cm12n60af.pdf Size:126K _jdsemi

2N60
2N60

R CM12N60AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.275. cm2n60c to251.pdf Size:143K _jdsemi

2N60
2N60

R CM2N60C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.276. cm2n60c.pdf Size:122K _jdsemi

2N60
2N60

R CM2N60C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 2 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 1 2 2.主要特点 开关速度快 通态电阻小,输入电

1.277. cm2n60f.pdf Size:145K _jdsemi

2N60
2N60

R CM2N60F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.278. cm2n60.pdf Size:143K _jdsemi

2N60
2N60

R CM2N60 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.279. cm12n60a to220a.pdf Size:123K _jdsemi

2N60
2N60

R CM12N60A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.280. ftk2n60p f d i.pdf Size:295K _first_silicon

2N60
2N60

SEMICONDUCTOR FTK2N60P / F / D / I TECHNICAL DATA 2 Amps, 600 Volts N-CHANNEL MOSFET I : 1 TO - 251 DESCRIPTION The FTK 2N60 is a high voltage MOSFET and is designed to D : have better characteristics, such as fast switching time, low gate 1 TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

1.281. ndt2n60p.pdf Size:1619K _kexin

2N60
2N60

DIP Type MOSFET N-Channel MOSFET NDT2N60P Unit:mm TO-251 6.50±0.15 2.30±0.10 5.30±0.10 0.58 (max) 0.43 (min) ■ Features ● VDS (V) = 600V ● ID = 2 A (VGS = 10V) ● RDS(ON) < 4.5Ω (VGS = 10V) 1 2 3 ● Low Gate Charge 0.80±0.10 ● Low Reverse transfer capacitances 0.60±0.10 0.58 (max) 2.30(typ) 0.43 (min) 4.60±0.10 1.20±0.15 ■ Absolute Maximum Ratin

1.282. ndt2n60.pdf Size:1627K _kexin

2N60
2N60

SMD Type MOSFET N-Channel MOSFET NDT2N60 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) = 600V ● ID = 2 A (VGS = 10V) ● RDS(ON) < 4.5Ω (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● Low Gate Charge ● Low Reverse transfer capacitances 1 Gate 2.3 0.60+ 0.1 - 0.1 2 Drain +0.15 4.60 -0.15 3 Source 4 Drain

1.283. sss12n60.pdf Size:8243K _shenzhen-tuofeng-semi

2N60
2N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 封装 Package 主要参数 MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65Ω (@Vgs=10V) 39nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源

1.284. sss2n60.pdf Size:1620K _shenzhen-tuofeng-semi

2N60
2N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 2 Amps 600Volts 2 Amps 600Volts 2 Amps 600Volts 2 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rug

1.285. svd2n60.pdf Size:603K _silan

2N60
2N60

SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

Datasheet: 2N5994 , 2N5995 , 2N5996 , 2N5998 , 2N5999 , 2N59A , 2N59B , 2N59C , 2N4403 , 2N600 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 .

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