2N6002 Datasheet. Specs and Replacement

Type Designator: 2N6002

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 165 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

 2N6002 Substitution

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2N6002 datasheet

 9.1. Size:395K  lrc

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2N6002

LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage... See More ⇒

Detailed specifications: 2N5999, 2N59A, 2N59B, 2N59C, 2N60, 2N600, 2N6000, 2N6001, BDT88, 2N6003, 2N6004, 2N6005, 2N6006, 2N6007, 2N6008, 2N6009, 2N601

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