2N6003 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6003
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
2N6003 Transistor Equivalent Substitute - Cross-Reference Search
2N6003 Datasheet (PDF)
9.1. Size:395K lrc
l2n600.pdf
l2n600.pdf
LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage
Datasheet: 2N59A , 2N59B , 2N59C , 2N60 , 2N600 , 2N6000 , 2N6001 , 2N6002 , BD139 , 2N6004 , 2N6005 , 2N6006 , 2N6007 , 2N6008 , 2N6009 , 2N601 , 2N6010 .
