2N6005 Specs and Replacement
Type Designator: 2N6005
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 225 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
2N6005 Substitution
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2N6005 datasheet
LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage... See More ⇒
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Detailed specifications: 2N59C , 2N60 , 2N600 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2SC5200 , 2N6006 , 2N6007 , 2N6008 , 2N6009 , 2N601 , 2N6010 , 2N6011 , 2N6012 .
Keywords - 2N6005 pdf specs
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