2N6007 Datasheet. Specs and Replacement

Type Designator: 2N6007

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

 2N6007 Substitution

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2N6007 datasheet

 9.1. Size:395K  lrc

 l2n600.pdf pdf_icon

2N6007

LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage... See More ⇒

 9.2. Size:1285K  sprague

 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N6007

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Detailed specifications: 2N600, 2N6000, 2N6001, 2N6002, 2N6003, 2N6004, 2N6005, 2N6006, BD139, 2N6008, 2N6009, 2N601, 2N6010, 2N6011, 2N6012, 2N6013, 2N6014

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