2N6007 Datasheet and Replacement
Type Designator: 2N6007
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
2N6007 Datasheet (PDF)
l2n600.pdf

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

Datasheet: 2N600 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 , 2N5551 , 2N6008 , 2N6009 , 2N601 , 2N6010 , 2N6011 , 2N6012 , 2N6013 , 2N6014 .
Keywords - 2N6007 transistor datasheet
2N6007 cross reference
2N6007 equivalent finder
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History: 2N2487 | RT3NUUM



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