All Transistors. 2N6007 Datasheet

 

2N6007 Datasheet and Replacement


   Type Designator: 2N6007
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
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2N6007 Datasheet (PDF)

 9.1. Size:395K  lrc
l2n600.pdf pdf_icon

2N6007

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage

Datasheet: 2N600 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 , 2N5551 , 2N6008 , 2N6009 , 2N601 , 2N6010 , 2N6011 , 2N6012 , 2N6013 , 2N6014 .

History: 2N2487 | RT3NUUM

Keywords - 2N6007 transistor datasheet

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