All Transistors. 2N6026 Datasheet

 

2N6026 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6026
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220

 2N6026 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6026 Datasheet (PDF)

 9.1. Size:120K  motorola
2n6027 2n6028.pdf

2N6026
2N6026

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6027/D2N6027Programmable2N6028Unijunction TransistorsSilicon Programmable Unijunction Transistors. . . designed to enable the engineer to program unijunction characteristics such asPUTsRBB, , IV, and IP by merely selecting two resistor values. Application includes40 VOLTSthyristor-trigger, oscillator,

 9.2. Size:67K  central
2n5629 2n5630 2n6029 2n6030.pdf

2N6026

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:148K  onsemi
2n6027 2n6028.pdf

2N6026
2N6026

2N6027, 2N6028Preferred DeviceProgrammableUnijunction TransistorProgrammable UnijunctionTransistor TriggersDesigned to enable the engineer to program unijunction http://onsemi.comcharacteristics such as RBB, , IV, and IP by merely selecting tworesistor values. Application includes thyristortrigger, oscillator, pulsePUTsand timing circuits. These devices may als

 9.4. Size:104K  jmnic
2n6029 2n6030.pdf

2N6026
2N6026

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI

 9.5. Size:131K  inchange semiconductor
2n6029 2n6030.pdf

2N6026
2N6026

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating

Datasheet: 2N6015 , 2N6016 , 2N6017 , 2N602 , 2N6021 , 2N6022 , 2N6024 , 2N6025 , 2N2222 , 2N6029 , 2N602A , 2N603 , 2N6030 , 2N6031 , 2N6032 , 2N6033 , 2N6034 .

 

 
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