2N6031 Datasheet. Specs and Replacement
Type Designator: 2N6031
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 1000 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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2N6031 datasheet
..1. Size:253K motorola
2n5630 2n6030 2n5631 2n6031.pdf 
Order this document MOTOROLA by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage High Power 2N5631 Transistors PNP . . . designed for use in high power audio amplifier applications and high voltage 2N6030 switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031 VCEO(sus) = 120 Vdc 2N5630, 2N6030 VCEO(sus) = 140 Vdc 2N5631, 2N603... See More ⇒
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2n6031.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6031 DESCRIPTION With TO-3 package Complement to type 2N5631 High collector sustaining voltage High DC current gain Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Bas... See More ⇒
9.1. Size:243K motorola
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2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 1 2 3 DESCRIPTION The 2N6036 and 2N6039 are complementary SOT-32 silicon power Darlington transistors ... See More ⇒
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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra... See More ⇒
9.6. Size:140K onsemi
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9.7. Size:109K onsemi
2n6039g.pdf
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9.8. Size:140K onsemi
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9.9. Size:140K onsemi
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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low-speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS ESD Ra... See More ⇒
9.11. Size:126K cdil
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company (PNP) SILICON POWER DARLINGTON TRANSISTORS 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package E C B Designed for General -Purpose Amplifier & Low Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2n6034 2N6... See More ⇒
9.12. Size:104K jmnic
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Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI... See More ⇒
9.13. Size:131K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating... See More ⇒
9.14. Size:219K inchange semiconductor
2n6032.pdf
isc Silicon NPN Power Transistor 2N6032 DESCRIPTION Collector-Emitter Breakdown Voltage- V =90V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage... See More ⇒
9.15. Size:123K inchange semiconductor
2n6034 2n6035 2n6036.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma... See More ⇒
9.16. Size:199K inchange semiconductor
2n6039.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2N6039 DESCRIPTION Collector Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) High DC Current Gain- hFE = 750(Min)@IC= 2A Complement to Type 2N6036 APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒
9.17. Size:121K inchange semiconductor
2n6037 2n6038 2n6039.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6037 2N6038 2N6039 DESCRIPTION With TO-126 package Complement to type 2N6034/6035/6036 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute ma... See More ⇒
9.18. Size:219K inchange semiconductor
2n6033.pdf
isc Silicon NPN Power Transistor 2N6033 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 150 V CBO V Collector-Emitter Volta... See More ⇒
9.19. Size:187K inchange semiconductor
2n6036.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -80V(Min.) DC Current Gain h = 750(Min) @ I = -2A FE C Complement to Type 2N6039 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-sp... See More ⇒
Detailed specifications: 2N6022, 2N6024, 2N6025, 2N6026, 2N6029, 2N602A, 2N603, 2N6030, 13009, 2N6032, 2N6033, 2N6034, 2N6035, 2N6036, 2N6037, 2N6038, 2N6039
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