2N6034 Datasheet and Replacement

   Type Designator: 2N6034
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126

2N6034 Substitution

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2N6034 Datasheet (PDF)

..1. Size:174K st
2n6034 2n6035 2n6036 2n6037 2n6038 2n6039.pdf pdf_icon

..2. Size:123K inchange semiconductor
2n6034 2n6035 2n6036.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6034 2N6035 2N6036 DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute ma

0.1. Size:140K onsemi
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2N6034G, 2N6035G,2N6036G (PNP),2N6038G, 2N6039G (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower Transistors4.0 AMPERES DARLINGTONPlastic Darlington complementary silicon power transistors aredesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ra

0.2. Size:126K cdil
2n6034-39.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company (PNP)SILICON POWER DARLINGTON TRANSISTORS 2N6034, 2N6035, 2N6036(NPN)2N6037, 2N6038, 2N6039 TO126 Plastic PackageECBDesigned for General -Purpose Amplifier & Low Speed Switching Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2n6034 2N6

9.1. Size:243K motorola
2n6035 2n6036 2n6038 2n6039.pdf pdf_icon

Order this documentMOTOROLAby 2N6035/DSEMICONDUCTOR TECHNICAL DATA2N6030 thru 2N6031(See 2N5630)Plastic DarlingtonComplementary Silicon PowerPNPTransistors2N6035. . . designed for generalpurpose amplifier and lowspeed switching applications. High DC Current Gain 2N6036*hFE = 2000 (Typ) @ IC = 2.0 AdcNPN CollectorEmitter Sustaining Voltage @

9.2. Size:253K motorola
2n5630 2n6030 2n5631 2n6031.pdf pdf_icon

Order this documentMOTOROLAby 2N5630/DSEMICONDUCTOR TECHNICAL DATANPN2N5630High-Voltage High Power2N5631TransistorsPNP. . . designed for use in high power audio amplifier applications and high voltage2N6030switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031VCEO(sus) = 120 Vdc 2N5630, 2N6030VCEO(sus) = 140 Vdc 2N5631, 2N603

9.3. Size:243K st
2n6036 2n6039.pdf pdf_icon

2N60362N6039COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronicsPREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER 123DESCRIPTION The 2N6036 and 2N6039 are complementarySOT-32silicon power Darlington transistors

9.4. Size:67K central
2n5629 2n5630 2n6029 2n6030.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.5. Size:140K onsemi
2n6038g.pdf pdf_icon

9.6. Size:109K onsemi
2n6039g.pdf pdf_icon

(PNP) 2N6034, 2N6035,2N6036; (NPN) 2N6038,2N6039Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsPlastic Darlington complementary silicon power transistors are4.0 AMPERES DARLINGTONdesigned for general purpose amplifier and low-speed switchingCOMPLEMENTARY SILICONapplications.POWER TRANSISTORSFeatures40, 60, 80 VOLTS, 40 WATTS ESD Ratings

9.7. Size:140K onsemi
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9.8. Size:140K onsemi
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9.9. Size:290K no
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9.10. Size:104K jmnic
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Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI

9.11. Size:131K inchange semiconductor
2n6029 2n6030.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rating

9.12. Size:219K inchange semiconductor
2n6032.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6032DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =90V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage

9.13. Size:117K inchange semiconductor
2n6031.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6031 DESCRIPTION With TO-3 package Complement to type 2N5631 High collector sustaining voltage High DC current gain Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION1 Bas

9.14. Size:199K inchange semiconductor
2n6039.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2N6039 DESCRIPTION CollectorEmitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) High DC Current Gain- : hFE = 750(Min)@IC= 2A Complement to Type 2N6036 APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

9.15. Size:121K inchange semiconductor
2n6037 2n6038 2n6039.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6037 2N6038 2N6039 DESCRIPTION With TO-126 package Complement to type 2N6034/6035/6036 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute ma

9.16. Size:219K inchange semiconductor
2n6033.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6033DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 150 VCBOV Collector-Emitter Volta

9.17. Size:187K inchange semiconductor
2n6036.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2N6036DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -80V(Min.)DC Current Gain: h = 750(Min) @ I = -2AFE CComplement to Type 2N6039Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-sp

Datasheet: 2N6026 , 2N6029 , 2N602A , 2N603 , 2N6030 , 2N6031 , 2N6032 , 2N6033 , 2SC4793 , 2N6035 , 2N6036 , 2N6037 , 2N6038 , 2N6039 , 2N603A , 2N604 , 2N6040 .