2N604 Datasheet. Specs and Replacement

Type Designator: 2N604

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.015 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

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2N604 datasheet

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Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Complementary Silicon Transistors thru . . . designed for general purpose amplifier and low speed switching applications. * 2N6042 High DC Current Gain NPN hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc 2N6043 VCEO(sus... See More ⇒

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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -... See More ⇒

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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒

Detailed specifications: 2N6033, 2N6034, 2N6035, 2N6036, 2N6037, 2N6038, 2N6039, 2N603A, BC327, 2N6040, 2N6041, 2N6042, 2N6043, 2N6044, 2N6045, 2N6046, 2N6047

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