2N604 Datasheet. Specs and Replacement
Type Designator: 2N604
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N604 Substitution
- BJT ⓘ Cross-Reference Search
2N604 datasheet
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Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Complementary Silicon Transistors thru . . . designed for general purpose amplifier and low speed switching applications. * 2N6042 High DC Current Gain NPN hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc 2N6043 VCEO(sus... See More ⇒
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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -... See More ⇒
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒
Detailed specifications: 2N6033, 2N6034, 2N6035, 2N6036, 2N6037, 2N6038, 2N6039, 2N603A, BC327, 2N6040, 2N6041, 2N6042, 2N6043, 2N6044, 2N6045, 2N6046, 2N6047
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