2N6040 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6040
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1200
Noise Figure, dB: -
Package: TO220AB
2N6040 Transistor Equivalent Substitute - Cross-Reference Search
2N6040 Datasheet (PDF)
2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf
Order this documentMOTOROLAby 2N6040/DSEMICONDUCTOR TECHNICAL DATAPNPPlastic Medium-Power2N6040Complementary SiliconTransistorsthru. . . designed for generalpurpose amplifier and lowspeed switching applications.*2N6042 High DC Current Gain NPNhFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043VCEO(sus
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PNP - 2N6040, 2N6042,NPN - 2N6043, 2N6045Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc60 -
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PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (
Datasheet: 2N6034 , 2N6035 , 2N6036 , 2N6037 , 2N6038 , 2N6039 , 2N603A , 2N604 , TIP35C , 2N6041 , 2N6042 , 2N6043 , 2N6044 , 2N6045 , 2N6046 , 2N6047 , 2N6048 .
