All Transistors. KTC4380 Datasheet

 

KTC4380 Datasheet, Equivalent, Cross Reference Search

Type Designator: KTC4380

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT-89

KTC4380 Transistor Equivalent Substitute - Cross-Reference Search

 

KTC4380 Datasheet (PDF)

1.1. ktc4380.pdf Size:57K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4380 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION FEATURES ·High Voltage : VCEO=160V. A C ·Large Continuous Collector Current Capability. H ·Recommended for LED Drive Application. G DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX D D D 0.45+0.15/-0.10 K E 4.25 MAX _ + F F F 1.50 0.10 G 0.40 TYP MAXIMUM RATING (Ta=25?)

5.1. ktc4373-o-y.pdf Size:383K _update

KTC4380
KTC4380



5.2. ktc4347.pdf Size:114K _update

KTC4380

RoHS KTC4347 SOT-89 KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM: 500 mW (Tamb=25℃) 2 3. EMITTER 3 Collector current ICM: 800 mA Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

5.3. ktc4375.pdf Size:311K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4375 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C ·1W (Mounted on Ceramic Substrate). H ·Small Flat Package. G ·Complementary to KTA1663. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25?) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

5.4. ktc4377.pdf Size:80K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H High DC Current Gain and Excellent hFE Linearity G : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX D _ + D B 2.50 0.20 : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). K

5.5. ktc4372.pdf Size:445K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4372 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A C High Voltage : VCEO=150V. H High Transition Frequency : fT=120MHz(Typ.). G 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1660. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.

5.6. ktc4370 a.pdf Size:456K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency : fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25

5.7. ktc4376.pdf Size:322K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4376 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1664. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40 TYP H

5.8. ktc4373.pdf Size:323K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4373 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A C High Voltage : VCEO=120V. H High Transition Frequency : fT=120MHz(Typ.). G 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1661. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10 G

5.9. ktc4379.pdf Size:459K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4379 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A C FEATURES H Low Saturation Voltage G : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX D _ + D B 2.50 0.20 Small Flat Package. K C 1.70 MAX D 0.45+0.15/-0.

5.10. ktc4369.pdf Size:442K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4369 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1658. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2

5.11. ktc4378.pdf Size:368K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4378 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A C FEATURES H High Voltage : VCEO=60V(Min.). G High Current : IC(Max.)=1A. High Transition Frequency : fT=150MHz (Typ.). DIM MILLIMETERS Wide Area of Safe Operation. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTA1668. K C 1.70 MAX D 0.45+0.15/-0.10

5.12. ktc4374.pdf Size:323K _kec

KTC4380
KTC4380

SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1662. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40 TYP

5.13. ktc4375.pdf Size:597K _htsemi

KTC4380
KTC4380

KTC4375 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperatu

5.14. ktc4377.pdf Size:623K _htsemi

KTC4380
KTC4380

KTC4377 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature

5.15. ktc4372.pdf Size:331K _htsemi

KTC4380

KTC4372 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Voltage Switching Application 2. COLLECTOR High Voltage High Transition Frequency 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current

5.16. ktc4376.pdf Size:390K _htsemi

KTC4380

KTC4376 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Current Application 2. COLLECTOR Complementary to KTA1664 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power

5.17. ktc4373.pdf Size:391K _htsemi

KTC4380

KTC4373 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package High Voltage Application 2. COLLECTOR High Voltage 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA

5.18. ktc4379.pdf Size:1037K _htsemi

KTC4380
KTC4380

KTC4379 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low saturation voltage High speed switching time 2. COLLECTOR 1 Complementary to KTA1666 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuo

5.19. ktc4378.pdf Size:965K _htsemi

KTC4380
KTC4380

KTC4378 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 80 V Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature 150

5.20. ktc4374.pdf Size:389K _htsemi

KTC4380

KTC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation 500 mW R?J

5.21. ktc4378 sot-89.pdf Size:201K _lge

KTC4380
KTC4380

KTC4378 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 3. EMITTER 1.6 2 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 High voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 80 V Collector-Base Voltage VCEO

5.22. ktc4377 sot-89.pdf Size:202K _lge

KTC4380
KTC4380

KTC4377 SOT-89 Transistor(NPN) 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 B 4.4 1.6 3. EMITTER 1.8 3 1.4 1.4 Features 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collec

5.23. ktc4375 sot-89.pdf Size:188K _lge

KTC4380
KTC4380

KTC4375 SOT-89 Transistor(NPN) 1. BASE SOT-89 1 2. COLLECTOR 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low voltage MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 30 V Collector-Base Voltage VCEO

5.24. ktc4379 sot-89.pdf Size:202K _lge

KTC4380
KTC4380

KTC4379 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 2 4.4 3. EMITTER 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low saturation voltage 0.8 MIN 0.53 High speed switching time 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complementary to KTA1666 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters)

5.25. ktc4375.pdf Size:311K _wietron

KTC4380
KTC4380

KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 30 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 1.5 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 ?C -55 to 150 St

5.26. ktc4377.pdf Size:107K _wietron

KTC4380
KTC4380

KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: SOT-89 * Low saturation voltage, VCE(sat) ?0.5V@2A/50mA * Excellent DC current gain characteristics. Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 10 V Collector-Emitter Voltage V VEB

5.27. ktc4379.pdf Size:419K _wietron

KTC4380
KTC4380

KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 50 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 2.0 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 ?C -55 to 150 St

5.28. ktc4375.pdf Size:1131K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4375 1.70 0.1 ■ Features ● Low voltage ● Comlementary to KTA1663 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 A Colle

5.29. ktc4372.pdf Size:1310K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4372 1.70 0.1 ■ Features ● High Voltage Switching Application ● High Voltage 0.42 0.1 ● High Transition Frequency 0.46 0.1 ● Comlementary to KTA1660 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emi

5.30. ktc4370a.pdf Size:407K _kexin

KTC4380

DIP Type Transistors NPN Transistors KTC4370A Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● High Transition Frequency ● Complementary to KTA1659A ±0.20 2.76 1.47max ±0.20 0.50 ±0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1

5.31. ktc4376.pdf Size:1102K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4376 1.70 0.1 ■ Features ● 1W (Mounted on Ceramic Substrate) ● Small Flat Package ● Complementary to KTA1664 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5

5.32. ktc4373.pdf Size:1155K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4373 1.70 0.1 ■ Features ● High Voltage Switching Application ● High Voltage ● High Transition Frequency 0.42 0.1 0.46 0.1 ● Comlementary to KTA1661 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Em

5.33. ktc4370.pdf Size:408K _kexin

KTC4380

DIP Type Transistors NPN Transistors KTC4370 Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● High Transition Frequency ● Complementary to KTA1659 ±0.20 2.76 1.47max ±0.20 0.50 ±0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160

5.34. ktc4379.pdf Size:1306K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4379 1.70 0.1 ■ Features ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Co

5.35. ktc4378.pdf Size:1168K _kexin

KTC4380
KTC4380

SMD Type Transistors NPN Transistors KTC4378 1.70 0.1 ■ Features ● High Voltage and High fT ● High Current ● Complementary to KTA1668 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 Collector Cur

Datasheet: KCR402T , KCR405T , KTC3203A , KTC3211 , KTC3730F , KTC3770F , KTC4074F , KTC4075F , 9012 , KTC8050A , KTC9014A , KTA1266A , KTA1271A , KTA2013F , KTA2014F , KTC3544S , KTC8550A .

 


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