KRC114 Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC114
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO-92
KRC114 Transistor Equivalent Substitute - Cross-Reference Search
KRC114 Datasheet (PDF)
krc110-krc114.pdf
SEMICONDUCTOR KRC110~KRC114EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27EQUIVALENT CIRCUIT
krc110m-krc114m.pdf
SEMICONDUCTOR KRC110M~KRC114MEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.
krc110s-krc114s.pdf
SEMICONDUCTOR KRC110S~KRC114STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURESDIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
