All Transistors. KTC3572 Datasheet

 

KTC3572 Datasheet, Equivalent, Cross Reference Search

Type Designator: KTC3572

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 9.5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO-92L

KTC3572 Transistor Equivalent Substitute - Cross-Reference Search

 

KTC3572 Datasheet (PDF)

0.1. ktc3572.pdf Size:56K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3572TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.B DHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERSA 7.20 MAXB 5.20 MAXC 0.60 MAXPD 2.50 MAXMAXIMUM RATING (Ta=25 ) DEPTH:0.2E 1.15 MAXF 1.27CCHARACTERISTIC SYMBOL RATING UNIT

8.1. ktc3571s.pdf Size:356K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3571STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).EHigh Collector Current Capability : IC and ICP.L B LHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05MAXIMUM RATING (Ta=25)E 2.40+0.30/-0.201G 1.90

 9.1. ktc3551t.pdf Size:89K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3551TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

9.2. ktc3543t.pdf Size:89K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3543TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

 9.3. ktc3542t.pdf Size:90K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3542TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

9.4. ktc3503.pdf Size:398K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3503TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH-DEFINITION CRT DISPLAY, ABVIDEO OUTPUT APPLICATIONS.DCEFEATURESFHigh breakdown voltage : VCEO 300V.Small reverse transfer capacitance and Gexcellent high frequency characteristic. H: Cre=1.8pF (VCB=30V, f=1MHz)DIM MILLIMETERSJA 8.3 MAXComplementary KTA1381.KB 5.8LC 0.7_+D

 9.5. ktc3536t.pdf Size:90K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3536TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

9.6. ktc3535t.pdf Size:89K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3535TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

9.7. ktc3541t.pdf Size:90K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3541TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

9.8. ktc3552t.pdf Size:377K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3552TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of FBET, MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3Hig

9.9. ktc3544s.pdf Size:576K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3544STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.FEATURESEAdoption of MBIT Processes.L B LDIM MILLIMETERSLarge Current Capacitance._+A 2.93 0.20B 1.30+0.20/-0.15Low Collector-to-Emitter Saturation Voltage.C 1.30 MAX2High Speed Switching. 3 D 0.40+0.15/-0.05E 2.40+0.30

9.10. ktc3544t.pdf Size:85K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3544TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

9.11. ktc3502.pdf Size:397K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3502TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH-DEFINITION CRT DISPLAYABVIDEO OUTPUT APPLICATION.DCEFEATURESFHigh Voltage : VCEO=200V.High Transition Frequency : fT=150MHz(Typ.).GLow Collector Output Capacitance : Cob=1.7pF(Typ.).HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F

9.12. ktc3531t.pdf Size:39K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3531TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS EBFEATURES KDIM MILLIMETERSLow Saturation Voltage _A 2.9 + 0.2B 1.6+0.2/-0.1: VCE(sat)=0.3V(Max.) at IC=0.5A._C 0.70 + 0.0523Complementary to KTA1531T. _D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05

9.13. ktc3553t.pdf Size:89K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3553TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3Ultrasmall-Sized Package permit

9.14. ktc3532t.pdf Size:89K _kec

KTC3572
KTC3572

SEMICONDUCTOR KTC3532TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

9.15. ktc3551t.pdf Size:948K _kexin

KTC3572
KTC3572

SMD Type TransistorsNPN TransistorsKTC3551TSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Adoption of MBIT Processes. Large Current Capacitance. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low Collector-to-Emitter Saturation Voltage.1.9+0.1-0.1 High-Speed Switching. High Allowable Power Dis sipation.1.Base Complementary to KTA1551T. 2.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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