2N6049E Datasheet. Specs and Replacement

Type Designator: 2N6049E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO66

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2N6049E datasheet

 8.1. Size:251K  motorola

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2N6049E

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 8.2. Size:130K  inchange semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION With TO-66 package Complement to type 2N3054A APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SY... See More ⇒

 9.1. Size:241K  motorola

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Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Complementary Silicon Transistors thru . . . designed for general purpose amplifier and low speed switching applications. * 2N6042 High DC Current Gain NPN hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc 2N6043 VCEO(sus... See More ⇒

 9.2. Size:301K  onsemi

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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -... See More ⇒

Detailed specifications: 2N6042, 2N6043, 2N6044, 2N6045, 2N6046, 2N6047, 2N6048, 2N6049, TIP35C, 2N604A, 2N605, 2N6050, 2N6051, 2N6052, 2N6053, 2N6054, 2N6055

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