All Transistors. 2SB1197KQLT1 Datasheet

 

2SB1197KQLT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1197KQLT1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23

 2SB1197KQLT1 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1197KQLT1 Datasheet (PDF)

 0.1. Size:113K  lrc
l2sb1197kqlt1g.pdf

2SB1197KQLT1
2SB1197KQLT1

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.1. Size:1392K  rohm
2sb1197k.pdf

2SB1197KQLT1
2SB1197KQLT1

2SB1197KDatasheetLow Frequency Transistor (-32V, -0.8A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-800mASMT3lFeatures lInner circuitl l1) Low VCE(sat). VCE(sat)-500mV( IC= -500mA / IB= -50mA)2) IC= -0.8A.3) Complements the 2SD1781K.lApplicationlLOW FREQUENCY POWER AMPLIFIERlPackaging specif

 6.2. Size:620K  secos
2sb1197k.pdf

2SB1197KQLT1
2SB1197KQLT1

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 3Top ViewC BMECHANICAL DATA 1 Case: SC-59, 1 22K E Weight: 0.008 grams(approx.) DCLASSIFICATION OF hFE H J

 6.3. Size:198K  lge
2sb1197k sot-23-3l.pdf

2SB1197KQLT1
2SB1197KQLT1

2SB1197K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Power amplifier 0.151.90MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

 6.4. Size:310K  willas
2sb1197kxlt1.pdf

2SB1197KQLT1
2SB1197KQLT1

FM120-M WILLAS2SB1197KxLT1THRULow Frequency TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toPNP Silicon

 6.5. Size:117K  lrc
l2sb1197krlt1g.pdf

2SB1197KQLT1
2SB1197KQLT1

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.6. Size:86K  chenmko
2sb1197kgp.pdf

2SB1197KQLT1
2SB1197KQLT1

CHENMKO ENTERPRISE CO.,LTD2SB1197KGPSURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1000mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High satu

 6.7. Size:319K  slkor
2sb1197k-q 2sb1197k-r.pdf

2SB1197KQLT1
2SB1197KQLT1

2SB1197KPlastic-Encapsulate TransistorsSOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: KTC3199L | WBP13007-K | D32S7

 

 
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