2SC2412KQLT1 Specs and Replacement
Type Designator: 2SC2412KQLT1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-23
2SC2412KQLT1 Substitution
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2SC2412KQLT1 datasheet
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2... See More ⇒
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412... See More ⇒
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412... See More ⇒
Detailed specifications: 2SA812SLT1, 2SB1197KQLT1, 2SB1197KRLT1, 2SC1623QLT1, 2SC1623RLT1, 2SC1623SLT1, 2SC2411KQLT1, 2SC2411KRLT1, 2SC2655, 2SC2412KRLT1, 2SC2412KSLT1, 2SC4081QT1, 2SC4081RT1, 2SC4081ST1, 8050HQLT1, 8050QLT1, 8050SLT1
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