2SC2412KRLT1 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC2412KRLT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT-23

2SC2412KRLT1 Transistor Equivalent Substitute - Cross-Reference Search

2SC2412KRLT1 Datasheet (PDF)

0.1. Size:127K lrc
l2sc2412krlt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

0.2. Size:127K lrc
l2sc2412kqlt1g l2sc2412kqlt3g l2sc2412krlt1g l2sc2412krlt3g l2sc2412kslt1g l2sc2412kslt3g.pdf