All Transistors. H2N6718L Datasheet

 

H2N6718L Datasheet and Replacement


   Type Designator: H2N6718L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.85 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO-92
 

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H2N6718L Datasheet (PDF)

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H2N6718L

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.05.03MICROELECTRONICS CORP.Page No. : 1/5H2N6718LNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718L is designed for general purpose medium power amplifier andswitching applications.FeaturesTO-92 High Power: 850mW High Current: 1AAbsolute Maximum Ratings Maximum TemperaturesSt

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H2N6718L

Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

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H2N6718L

Spec. No. : HE6616HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5H2N6718VNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718V is designed for general purpose medium power amplifier andswitching.TO-126MLAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................................

Datasheet: H2N3904 , H2N3906 , H2N4401 , H2N4403 , H2N5087 , H2N5401 , H2N5551 , H2N6388 , BD140 , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , HA8550S , HBC517 .

History: GES3404 | TIPL751

Keywords - H2N6718L transistor datasheet

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