H2N6718T Datasheet, Equivalent, Cross Reference Search
Type Designator: H2N6718T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO-126
H2N6718T Transistor Equivalent Substitute - Cross-Reference Search
H2N6718T Datasheet (PDF)
h2n6718t.pdf
Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................
h2n6718l.pdf
Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.05.03MICROELECTRONICS CORP.Page No. : 1/5H2N6718LNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718L is designed for general purpose medium power amplifier andswitching applications.FeaturesTO-92 High Power: 850mW High Current: 1AAbsolute Maximum Ratings Maximum TemperaturesSt
h2n6718v.pdf
Spec. No. : HE6616HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5H2N6718VNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718V is designed for general purpose medium power amplifier andswitching.TO-126MLAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................................
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
