H2N6718T Specs and Replacement
Type Designator: H2N6718T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO-126
H2N6718T Substitution
- BJT ⓘ Cross-Reference Search
H2N6718T datasheet
Spec. No. HT200701 HI-SINCERITY Issued Date 2007.08.01 Revised Date 2007.08.09 MICROELECTRONICS CORP. Page No. 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................... See More ⇒
Spec. No. HE6218 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.05.03 MICROELECTRONICS CORP. Page No. 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features TO-92 High Power 850mW High Current 1A Absolute Maximum Ratings Maximum Temperatures St... See More ⇒
Spec. No. HE6616 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature .................................................. See More ⇒
Detailed specifications: H2N3906 , H2N4401 , H2N4403 , H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , 2SA1943 , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , HA8550S , HBC517 , HBC847 .
History: 2SC1348 | 2N3904E | 2SC4226 | 2N3904S | 2N3904V
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