All Transistors. HA8550S Datasheet

 

HA8550S Datasheet and Replacement


   Type Designator: HA8550S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-92
 

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HA8550S Datasheet (PDF)

 ..1. Size:55K  hsmc
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HA8550S

Spec. No. : HE6109HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8050SAbsolute Maximum Ratings Maximum Temperatu

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HA8550S

Spec. No. : HE6108HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2004.11.23MICROELECTRONICS CORP.Page No. : 1/5HA8550PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.FeaturesTO-92 High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

Datasheet: H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , A1941 , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 , HBF423 .

History: BSV10-6 | 2N5154X-220M

Keywords - HA8550S transistor datasheet

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