HA8550S pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HA8550S Specs and Replacement

Type Designator: HA8550S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

HA8550S Substitution

- BJT ⓘ Cross-Reference Search

HA8550S datasheet

..1. Size:55K hsmc

ha8550s.pdf pdf_icon

Spec. No. HE6109 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8050S Absolute Maximum Ratings Maximum Temperatu... See More ⇒

8.1. Size:52K hsmc

ha8550.pdf pdf_icon

Spec. No. HE6108 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2004.11.23 MICROELECTRONICS CORP. Page No. 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A) ... See More ⇒

Detailed specifications: H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , HA8050 , HA8050S , HA8550 , D882 , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T , HBD438T , HBF422 , HBF423 .