HBD438T pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HBD438T Specs and Replacement

Type Designator: HBD438T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO-126

HBD438T Substitution

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HBD438T datasheet

..1. Size:41K hsmc

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Spec. No. HT200206 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. TO-126 A... See More ⇒

9.1. Size:43K hsmc

hbd437t.pdf pdf_icon

Spec. No. HT200201 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. TO-126 A... See More ⇒

9.2. Size:144K shantou-huashan

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