HE9015 Datasheet and Replacement
Type Designator: HE9015
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92
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HE9015 Datasheet (PDF)
he9015.pdf

Spec. No. : HE6101HI-SINCERITYIssued Date : 1992.08.25Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/5HE9015PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HE9015 is designed for use in pre-amplifier of low level and low noise.TO-92Features High Total Power Dissipation (PD: 450mW) Complementary to HE9014 High hFE and Good LinearityAbsolute Maxim
he9014.pdf

Spec. No. : HE6102HI-SINCERITYIssued Date : 1992.08.25Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/5HE9014NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE9014 is designed for use in pre-amplifier of low level and low noise.TO-92Features High Total Power Dissipation (PD: 450mW) Complementary to HE9015 High hFE and Good LinearityAbsolute Maxim
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: FZT560 | CH867UPNGP | AFY29 | ET5065 | NJD2873T4G | HI3669 | KRA310
Keywords - HE9015 transistor datasheet
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History: FZT560 | CH867UPNGP | AFY29 | ET5065 | NJD2873T4G | HI3669 | KRA310



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