HJ667A Datasheet. Specs and Replacement

Type Designator: HJ667A  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-252

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HJ667A datasheet

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HJ667A

Spec. No. HE6830 HI-SINCERITY Issued Date 1994.01.25 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/3 HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..................................................................... See More ⇒

Detailed specifications: HI882, HJ10387, HJ112, HJ117, HJ122, HJ127, HJ13003, HJ3669, 8550, HJ669A, HJ772, HJ882, HLB120A, HLB121A, HLB121D, HLB121I, HLB122I

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