HJ667A Datasheet, Equivalent, Cross Reference Search
Type Designator: HJ667A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-252
HJ667A Transistor Equivalent Substitute - Cross-Reference Search
HJ667A Datasheet (PDF)
..1. Size:34K hsmc
hj667a.pdf
hj667a.pdf
Spec. No. : HE6830HI-SINCERITYIssued Date : 1994.01.25Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/3HJ667APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ667A is designed for low frequency power amplifier.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..................................................................
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
