HJ882 Datasheet. Specs and Replacement

Type Designator: HJ882  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO-252

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HJ882 datasheet

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HJ882

Spec. No. HE6014 HI-SINCERITY Issued Date 1996.04.12 Revised Date 2006.12.06 MICROELECTRONICS CORP. Page No. 1/5 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-252 Absolute Maximum Ratings (T =25 C) A Maximum Temperatures S... See More ⇒

Detailed specifications: HJ117, HJ122, HJ127, HJ13003, HJ3669, HJ667A, HJ669A, HJ772, C3198, HLB120A, HLB121A, HLB121D, HLB121I, HLB122I, HLB123D, HLB123I, HLB123SA

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