All Transistors. HLB122I Datasheet

 

HLB122I Transistor. Datasheet pdf. Equivalent

Type Designator: HLB122I

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-251

HLB122I Transistor Equivalent Substitute - Cross-Reference Search

HLB122I Datasheet (PDF)

1.1. hlb122i.pdf Size:51K _hsmc

HLB122I
HLB122I

Spec. No. : HE9030 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2005.07.13 MICROELECTRONICS CORP. Page No. : 1/5 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching applications. TO-251 Features • High breakdown voltage • Low collector saturation voltage • Fast switching spee

5.1. hlb121.pdf Size:130K _update

HLB122I
HLB122I

UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L

5.2. HLB121D.pdf Size:38K _hsmc

HLB122I
HLB122I

Spec. No. : HD200205 HI-SINCERITY Issued Date : 2002.05.01 Revised Date : 2005.08.16 MICROELECTRONICS CORP. Page No. : 1/4 HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO-126ML Features • High breakdown voltage • Low collector saturation voltage • Fast switching

5.3. hlb120a.pdf Size:45K _hsmc

HLB122I
HLB122I

Spec. No. : HE6412 HI-SINCERITY Issued Date : 1998.12.01 Revised Date : 2005.02.05 MICROELECTRONICS CORP. Page No. : 1/4 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching applications. TO-92 Features • High Breakdown Voltage • Low Collector Saturation Voltage • Fast Switching Spee

5.4. hlb123t.pdf Size:40K _hsmc

HLB122I
HLB122I

Spec. No. : HT200402 HI-SINCERITY Issued Date : 1993.05.15 Revised Date : 2006.02.20 MICROELECTRONICS CORP. Page No. : 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126 • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

5.5. hlb121a.pdf Size:47K _hsmc

HLB122I
HLB122I

Spec. No. : HA200112 HI-SINCERITY Issued Date : 2001.04.01 Revised Date : 2007.09.29 MICROELECTRONICS CORP. Page No. : 1/4 HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching applications. TO-92 Features • High breakdown voltage • Low collector saturation voltage • Fast

5.6. hlb124e.pdf Size:46K _hsmc

HLB122I
HLB122I

Spec. No. : HE6727 HI-SINCERITY Issued Date : 1998.07.01 Revised Date : 2004.11.03 MICROELECTRONICS CORP. Page No. : 1/5 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features TO-220 • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Ma

5.7. hlb123sa.pdf Size:187K _hsmc

HLB122I
HLB122I

Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-92 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings Param

5.8. hlb123i.pdf Size:53K _hsmc

HLB122I
HLB122I

Spec. No. : HI200202 HI-SINCERITY Issued Date : 2002.06.01 Revised Date : 2005.07.13 MICROELECTRONICS CORP. Page No. : 1/5 HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. TO-251 Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

5.9. HLB123D.pdf Size:47K _hsmc

HLB122I
HLB122I

Spec. No. : HE6603 HI-SINCERITY Issued Date : 1993.03.15 Revised Date : 2005.08.16 MICROELECTRONICS CORP. Page No. : 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126ML • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

5.10. hlb125he.pdf Size:50K _hsmc

HLB122I
HLB122I

Spec. No. : HE200214 HI-SINCERITY Issued Date : 2002.09.01 Revised Date : 2004.11.08 MICROELECTRONICS CORP. Page No. : 1/5 HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. TO-220 Features • High Speed Switching • Low Saturation Vo

5.11. hlb121i.pdf Size:44K _hsmc

HLB122I
HLB122I

Spec. No. : HE9027 HI-SINCERITY Issued Date : 1996.11.06 Revised Date : 2005.07.13 MICROELECTRONICS CORP. Page No. : 1/4 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching applications. TO-251 Features • High breakdown voltage • Low collector saturation voltage • Fast switching spee

Datasheet: HJ667A , HJ669A , HJ772 , HJ882 , HLB120A , HLB121A , HLB121D , HLB121I , TIP41 , HLB123D , HLB123I , HLB123SA , HLB123T , HLB124E , HLB125HE , HM112 , HM117 .

 


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