HMBT6520 Datasheet. Specs and Replacement
Type Designator: HMBT6520 ππ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT-23
HMBT6520 Substitution
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HMBT6520 datasheet
Spec. No. HE6806 HI-SINCERITY Issued Date 1996.04.10 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages. Features SOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H... See More ⇒
Spec. No. HE6836 HI-SINCERITY Issued Date 1994.07.20 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages. Features SOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H... See More ⇒
Spec. No. HE6846 HI-SINCERITY Issued Date 1995.07.21 Revised Date 2004.08.31 MICROELECTRONICS CORP. Page No. 1/4 HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature................................................................................................................... See More ⇒
Detailed specifications: HMBT3904, HMBT3906, HMBT4401, HMBT4403, HMBT5401, HMBT5551, HMBT6427, HMBT6517, 2SC5200, HMBT8050, HMBT8550, HMBTA06, HMBTA13, HMBTA14, HMBTA42, HMBTA44, HMBTA92
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