2N607 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D*2N6071A,B*2N6073A,BSensitive Gate Triacs2N6075A,B*Silicon Bidirectional Thyristors*Motorola preferred devices. . . designed primarily for full-wave ac control applications, such as light dimmers,motor controls, heating controls and power supplies; or wherever full-wave silicongate controlled solid-sta

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D*2N6071,A,B*2N6073,A,BSensitive Gate Triacs2N6075,A,B*Silicon Bidirectional Thyristors*Motorola preferred devices. . . designed primarily for full-wave ac control applications, such as light dimmers,motor controls, heating controls and power supplies; or wherever full-wave siliconTRIACsgate controlle

DISCRETE POWER & SIGNAL TECHNOLOGIES2N6076SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.1451 2 3(3.429 - 3.683)BVCEO . . . . 25 V (Min) 1 2 3 B C EhFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 0.175 - 0.185(4.450 - 4.700)ABSOLUTE MAXIMUM RATINGS (NOTE 1)TEMPERATURESLOGOXYY 0.175 - 0.185Storage Temperature -55 Degrees C to 150 Degrees C(4.450 - 4.700)2NOp

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

2N6077Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6079Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 350V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6078MECHANICAL DATADimensions in mm(inches)NPN MULTI - EPITAXIAL6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)POWER TRANSISTORmax.4.08(0.161)rad.1 2FEATURES HIGH VOLTAGE LOW SATURATION VOLTAGES HIGH RELIABILITY1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)APPLICATIONSmin. POWER SWITCHING CIRCUITSTO66(TO213AA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TVs and CRTs PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Abso

isc Silicon NPN Power Transistor 2N6078DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh voltageLow Collector-Emitter Saturation Voltage-100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLinear applicationsPower switching circuitsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TVs and CRTs PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolut