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HPH2369 Specs and Replacement

Type Designator: HPH2369

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-92

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HPH2369 datasheet

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HPH2369

Spec. No. HE6133 HI-SINCERITY Issued Date 1993.06.18 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/5 HPH2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HPH2369 is designed for general purpose switching and amplifier applications. TO-92 Features Low Collector Saturation Voltage High speed switching Transistor Absolute Maximum Ratings Maximum T... See More ⇒

Detailed specifications: HMJE2955T , HMJE3055T , HMPSA06 , HMPSA42 , HMPSA44 , HMPSA92 , HMPSA92M , HMPSA94 , TIP31C , HPN2222A , HPN2907A , HSA1015 , HSA733 , HSB1109 , HSB1109S , HSB649A , HSB649T .

History: HMJE13003D | HMJE13005

Keywords - HPH2369 pdf specs

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History: HMJE13003D | HMJE13005

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