All Transistors. HSD669A Datasheet

 

HSD669A Datasheet and Replacement


   Type Designator: HSD669A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-126ML
 

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HSD669A Datasheet (PDF)

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HSD669A

Spec. No. : HE6630HI-SINCERITYIssued Date : 1995.12.18Revised Date : 2006.07.27MICROELECTRONICS CORP.Page No. : 1/4HSD669ANPN Epitaxial Planar TransistorDescriptionLow frequency power amplifier complementary pair with HSB649ATO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature............................................................

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HSD669A

Spec. No. : H200901 HI-SINCERITY Issued Date : 2009.02.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25C) Maximum Temperatures Storage Temperature .........................................................

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HSD669A

Spec. No. : HE6510HI-SINCERITYIssued Date : 1996.07.15Revised Date : 2004.08.16MICROELECTRONICS CORP.Page No. : 1/5HSD667ASILICON NPN EPITAXIALDescriptionLow Frequency Power Amplifier Complementary Pair With HSB647A.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ..................................................................................

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJ11014

Keywords - HSD669A transistor datasheet

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