HSD669A Specs and Replacement
Type Designator: HSD669A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-126ML
HSD669A Substitution
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HSD669A datasheet
Spec. No. HE6630 HI-SINCERITY Issued Date 1995.12.18 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature............................................................... See More ⇒
Spec. No. H200901 HI-SINCERITY Issued Date 2009.02.20 Revised Date MICROELECTRONICS CORP. Page No. 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................ See More ⇒
Spec. No. HE6510 HI-SINCERITY Issued Date 1996.07.15 Revised Date 2004.08.16 MICROELECTRONICS CORP. Page No. 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ..................................................................................... See More ⇒
Detailed specifications: HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, TIP31, HSD669AT, HSD879, HSD882, HSD882S, HSD965, HT112, HT117, HT772
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