HSD669A Datasheet, Equivalent, Cross Reference Search
Type Designator: HSD669A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-126ML
HSD669A Transistor Equivalent Substitute - Cross-Reference Search
HSD669A Datasheet (PDF)
hsd669a.pdf
Spec. No. : HE6630HI-SINCERITYIssued Date : 1995.12.18Revised Date : 2006.07.27MICROELECTRONICS CORP.Page No. : 1/4HSD669ANPN Epitaxial Planar TransistorDescriptionLow frequency power amplifier complementary pair with HSB649ATO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature............................................................
hsd669at.pdf
Spec. No. : H200901 HI-SINCERITY Issued Date : 2009.02.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 HSD669AT NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25C) Maximum Temperatures Storage Temperature .........................................................
hsd667a.pdf
Spec. No. : HE6510HI-SINCERITYIssued Date : 1996.07.15Revised Date : 2004.08.16MICROELECTRONICS CORP.Page No. : 1/5HSD667ASILICON NPN EPITAXIALDescriptionLow Frequency Power Amplifier Complementary Pair With HSB647A.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ..................................................................................
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
