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HT772 Specs and Replacement

Type Designator: HT772

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-126

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HT772 datasheet

 ..1. Size:52K  hsmc

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HT772

Spec. No. HT200209 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2006.02.20 MICROELECTRONICS CORP. Page No. 1/5 HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperatur... See More ⇒

Detailed specifications: HSD669A, HSD669AT, HSD879, HSD882, HSD882S, HSD965, HT112, HT117, TIP42, HT882, HTIP112, HTIP117, HTIP122, HTIP127, HTIP41C, HTIP42C, HUN2111

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