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2N6080 Specs and Replacement

Type Designator: 2N6080

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO128

 2N6080 Substitution

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2N6080 datasheet

 ..1. Size:279K  microsemi

2n6080 2n6084.pdf pdf_icon

2N6080

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Detailed specifications: 2N6066, 2N6067, 2N607, 2N6076, 2N6077, 2N6078, 2N6079, 2N608, TIP2955, 2N6081, 2N6082, 2N6083, 2N6084, 2N6085, 2N6086, 2N6087, 2N6088

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